X-On Electronics has gained recognition as a prominent supplier of 19N10L-TM3-T MOSFETs across the USA, India, Europe, Australia, and various other global locations. 19N10L-TM3-T MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

19N10L-TM3-T Unisonic

19N10L-TM3-T electronic component of Unisonic
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See Product Specifications
Part No.19N10L-TM3-T
Manufacturer: Unisonic
Category: MOSFETs
Description: MOSFET N Trench 100V 15.6A 4V @ 250uA 100 mO @ 7.8A,10V TO-251 (I-PAK) RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.214 ea
Line Total: USD 21.4 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 100
Multiples : 1
100 : USD 0.214
500 : USD 0.2056
1000 : USD 0.2035
5040 : USD 0.1954

   
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We are delighted to provide the 19N10L-TM3-T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 19N10L-TM3-T and other electronic components in the MOSFETs category and beyond.

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The 19N10L-TM3-T is a MOSFET transistor manufactured by Unisonic. It is a N-channel trench type fully enhanced MOSFET which has a voltage rating of 100V and a rated current of 15.6A. The transistor has a low-voltage gate driver with a threshold of 4V over 250uA and a drain to source saturation voltage of 100 mO at 7.8A. The transistor device is packaged within a TO-251 (I-PAK) RoHS compliant package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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