X-On Electronics has gained recognition as a prominent supplier of 1N60L-TN3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. 1N60L-TN3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

1N60L-TN3-R Unisonic

Name: 1N60L-TN3-R
Brand: Unisonic
SKU: 1N60LTN3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

1N60L-TN3-R electronic component of Unisonic

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See Product Specifications

Part No.	1N60L-TN3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Trench 600V 1.2A (Tc) 4V @ 250uA 11.5 Î© @ 600mA,10V TO-252-2 (DPAK) RoHS
Datasheet:	1N60L-TN3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2099 ea
Line Total: USD 1.05

Availability - 1561
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

1N60L-TN3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1561

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 5
Multiples : 5

5 : USD 0.2099
50 : USD 0.1669
150 : USD 0.1484
500 : USD 0.1253
2500 : USD 0.115
5000 : USD 0.1089

Specifications

Manufacturer
Unisonic Unisonic

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)

Brand Category
Unisonic Unisonic

Fet Type
n trench n trench

Drain To Source Voltagevdss
600 V 600 V

Continuous Drain Current Id @ 25°C
1.2 A (t C) 1.2 A (t C)

Vgsth Max @ Id
4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs
11.5 @ 600ma,10v 11.5 @ 600ma,10v

Power Dissipation-Max Ta
28 W 28 W

Drain Source Voltage Vdss
600 V 600 V

Continuous Drain Current Id
1.2 A 1.2 A

Power Dissipation Pd
28 W 28 W

Drain Source On Resistance Rdson@Vgs Id
11.5 Ohms @10V , 600mA 11.5 Ohms @10V , 600mA

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

1N60L-TN3-R Alternative Parts

We are delighted to provide the 1N60L-TN3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N60L-TN3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechnologiesThe 1N60L-TN3-R is a metal oxide semiconductor field-effect transistor (MOSFET) from Unisonic Technologies. It has a trench N type MOSFET with a low gate threshold voltage of 4V at 250uA. This MOSFET is rated at 600V with a current rating of 1.2A and a maximum power dissipation of 2.88 watts. The device comes in a TO-252-2 (DPAK) RoHS package and has a low on-resistance of 11.5O at 600mA. It is designed to have fast switching times and low input and output capacitance. This device is suitable for applications in power switching/converters, DC/DC converters, and motor controls.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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1561 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 5 Multiples : 5	5 : USD 0.2099 50 : USD 0.1669 150 : USD 0.1484 500 : USD 0.1253 2500 : USD 0.115 5000 : USD 0.1089

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