X-On Electronics has gained recognition as a prominent supplier of 2N7002G-AE2-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002G-AE2-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002G-AE2-R Unisonic

Name: 2N7002G-AE2-R
Brand: Unisonic
SKU: 2N7002GAE2R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

2N7002G-AE2-R electronic component of Unisonic

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See Product Specifications

Part No.	2N7002G-AE2-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Trench 60V 300mA 2.5V @ 250uA 7.5 Î© @ 300m,10V SOT-23-3 RoHS
Datasheet:	2N7002G-AE2-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0251 ea
Line Total: USD 0.5

Availability - 30148
Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

2N7002G-AE2-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

30148

Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0251
200 : USD 0.0201
600 : USD 0.0173
3000 : USD 0.014
9000 : USD 0.0125
21000 : USD 0.0119

Specifications

Manufacturer
Unisonic Unisonic

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 - 3 SOT - 23 - 3

Brand Category
Unisonic Unisonic

Fet Type
n trench n trench

Drain To Source Voltagevdss
60 V 60 V

Continuous Drain Current Id @ 25°C
300 mA 300 mA

Vgsth Max @ Id
2.5 V @ 250ua 2.5 V @ 250ua

Rds On Max @ Id Vgs
7.5 @ 300m,10v 7.5 @ 300m,10v

Power Dissipation-Max Ta
200 mW 200 mW

Drain Source Voltage Vdss
60 V 60 V

Continuous Drain Current Id
300 mA 300 mA

Power Dissipation Pd
200 mW 200 mW

Drain Source On Resistance Rdson@Vgs Id
7.5 Ohms @300m , 10V 7.5 Ohms @300m , 10V

Gate Threshold Voltage Vgsth@Id
2.5 V @250uA 2.5 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

2N7002G-AE2-R Alternative Parts

We are delighted to provide the 2N7002G-AE2-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002G-AE2-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechThe 2N7002G-AE2-R is a MOSFET transistor from Unisonic Technologies. It is made of a N-channel Trench MOSFET, that has a voltage rating of 60V, and a maximum drain current of 300mA. It has a drain-source break down voltage of 2.5V, and a drain-source On-state resistance of 7.5O at 300mA. This transistor also has a gate-source threshold voltage of 10V and is housed in a SOT-23-3 package type. Finally, this item is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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