X-On Electronics has gained recognition as a prominent supplier of 2N80L-TN3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N80L-TN3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N80L-TN3-R Unisonic

Name: 2N80L-TN3-R
Brand: Unisonic
SKU: 2N80LTN3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

2N80L-TN3-R electronic component of Unisonic

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See Product Specifications

Part No.	2N80L-TN3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Trench 800V 2.4A (Tc) 4V @ 250uA 6.3 Î© @ 1.2A,10V TO-252-2 (DPAK) RoHS
Datasheet:	2N80L-TN3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.4741 ea
Line Total: USD 2.37

Availability - 2347
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 5 Multiples: 5
Pack Size: 5

2N80L-TN3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2347

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 5
Multiples : 5

5 : USD 0.4741
50 : USD 0.3213
150 : USD 0.2565
500 : USD 0.2156
2500 : USD 0.1974
5000 : USD 0.1864

Specifications

Manufacturer

Unisonic Unisonic

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)

Brand Category

Unisonic Unisonic

Fet Type

n trench n trench

Drain To Source Voltagevdss

800 V 800 V

Continuous Drain Current Id @ 25°C

2.4 A (t C) 2.4 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

6.3 @ 1.2a,10v 6.3 @ 1.2a,10v

Power Dissipation-Max Ta

24 W 24 W

Drain Source Voltage Vdss

800 V 800 V

Continuous Drain Current Id

2.4 A 2.4 A

Power Dissipation Pd

24 W 24 W

Drain Source On Resistance Rdson@Vgs Id

6.3 Ohms @10V , 1.2A 6.3 Ohms @10V , 1.2A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

2N80L-TN3-R Alternative Parts

We are delighted to provide the 2N80L-TN3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N80L-TN3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechnologiesThe 2N80L-TN3-R is a MOSFET N Trench 800V 2.4A manufactured by Unisonic Technologies. It is a dual package TO-252-2 (DPAK) with a RoHS compliance rating. It is a high-impedance MOSFET with a maximum drain-source breakdown voltage of 800V and a gate threshold voltage of 4V. It has a maximum drain current of 2.4A and a maximum gate-source leakage of 250uA. It also has an on state resistance of 6.3O and a maximum current output of 1.2A at 10V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Availability	Price	Buy Price	Quantity
2347 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 5 Multiples : 5	5 : USD 0.4741 50 : USD 0.3213 150 : USD 0.2565 500 : USD 0.2156 2500 : USD 0.1974 5000 : USD 0.1864

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