X-On Electronics has gained recognition as a prominent supplier of 4N60L-B-TM3-T MOSFETs across the USA, India, Europe, Australia, and various other global locations. 4N60L-B-TM3-T MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

4N60L-B-TM3-T Unisonic

Name: 4N60L-B-TM3-T
Brand: Unisonic
SKU: 4N60LBTM3T_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

4N60L-B-TM3-T electronic component of Unisonic

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See Product Specifications

Part No.	4N60L-B-TM3-T
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.5 Î© @ 2.2A,10V TO-251 (I-PAK) RoHS
Datasheet:	4N60L-B-TM3-T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3216 ea
Line Total: USD 0.32

Availability - 20
Ship by Thu. 28 Nov to Tue. 03 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

4N60L-B-TM3-T More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

20

Ship by Thu. 28 Nov to Tue. 03 Dec

MOQ : 1
Multiples : 1

1 : USD 0.3216
10 : USD 0.2614
30 : USD 0.2357
80 : USD 0.2036
480 : USD 0.1893
960 : USD 0.1806

Specifications

Manufacturer
Unisonic Unisonic

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 251 (I - PAK) TO - 251 (I - PAK)

Brand Category
Unisonic Unisonic

Fet Type
n trench n trench

Drain To Source Voltagevdss
600 V 600 V

Continuous Drain Current Id @ 25°C
4 A (t C) 4 A (t C)

Vgsth Max @ Id
4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs
2.5 @ 2.2a,10v 2.5 @ 2.2a,10v

Power Dissipation-Max Ta
50 W 50 W

Drain Source Voltage Vdss
600 V 600 V

Continuous Drain Current Id
4 A 4 A

Power Dissipation Pd
50 W 50 W

Drain Source On Resistance Rdson@Vgs Id
2.5 Ohms @10V , 2.2A 2.5 Ohms @10V , 2.2A

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

4N60L-B-TM3-T Alternative Parts

We are delighted to provide the 4N60L-B-TM3-T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 4N60L-B-TM3-T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechnologiesThe 4N60L-B-TM3-T is a MOSFET N Trench 600V (VDSS) 4A (ID) 4V (VGS) 250uA (VAS) 2.5 ohm (RDS(on)) 2.2A (ID) 10V (VDSS) packaged in a TO-251 (I-PAK) RoHS package manufactured by Unisonic Technologies. It features low RDS(on) with fast switching speed, high performance and high power dissipation. It is highly suitable for high side switching applications. This MOSFET is available on tape and reel for easy automated assembly on consumer goods.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Availability	Price	Buy Price	Quantity
20 Ship by Thu. 28 Nov to Tue. 03 Dec MOQ : 1 Multiples : 1	1 : USD 0.3216 10 : USD 0.2614 30 : USD 0.2357 80 : USD 0.2036 480 : USD 0.1893 960 : USD 0.1806

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