X-On Electronics has gained recognition as a prominent supplier of UT3N06G-AE3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT3N06G-AE3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT3N06G-AE3-R Unisonic

Name: UT3N06G-AE3-R
Brand: Unisonic
SKU: UT3N06GAE3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

UT3N06G-AE3-R electronic component of Unisonic

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See Product Specifications

Part No.	UT3N06G-AE3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Trench 60V 3A 3V @ 250uA 90 mO @ 3A,10V SOT-23 (SOT-23-3) RoHS
Datasheet:	UT3N06G-AE3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.1055 ea
Line Total: USD 1.06

Availability - 6906
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 10 Multiples: 10
Pack Size: 10

UT3N06G-AE3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

6906

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 10
Multiples : 10

10 : USD 0.1055
100 : USD 0.0844
300 : USD 0.0633
3000 : USD 0.0487
6000 : USD 0.0437
9000 : USD 0.0413

Specifications

Manufacturer

Unisonic Unisonic

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Unisonic Unisonic

Fet Type

n trench n trench

Drain To Source Voltagevdss

60 V 60 V

Continuous Drain Current Id @ 25°C

3 A 3 A

Vgsth Max @ Id

3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs

90 m @ 3a,10v 90 m @ 3a,10v

Power Dissipation-Max Ta

350 mW 350 mW

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

3 A 3 A

Drain Source On Resistance Rdson@Vgs Id

90 mOhms @10V , 3A 90 mOhms @10V , 3A

Power Dissipation Pd

350 mW 350 mW

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

UT3N06G-AE3-R Alternative Parts

We are delighted to provide the UT3N06G-AE3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT3N06G-AE3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechnologiesThe UT3N06G-AE3-R is a MOSFET N Trench 60V 3A 3V @ 250uA 90 mOhm @ 3A, 10V SOT-23 (SOT-23-3) RoHS manufactured by Unisonic Technologies. It is a three-terminal field-effect transistor consisting of an N-channel enhancement mode power MOSFET and is designed to handle high-current switching applications. It has three pins and an R on the second pin marking the source. This device offers low on-state resistance, low gate charge, and fast switching speeds. It also features a maximum drain-source voltage of 60V and maximum drain current of 3A, and is suited for high-side applications. It has a maximum gate-source voltage of 3V @ 250uA and a maximum drain-source on-state resistance of 90 mOhm @ 3A, 10V. It is RoHS compliant and measures 3x2.9x1.9mm.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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