UF3C120080B7S UnitedSiC

1200V-85mW SiC FET Rev. A, November 2020 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3C120080B7S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction 2 devices. Available in the D PAK-7L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application D (Tab) requiring standard gate drive. Features Tab w On-resistance R : 85m W (typ) DS(on) w Operating temperature: 175C (max) G (1) 1 w Excellent reverse recovery: Q = 140nC rr w Low body diode V : 1.5V FSD 7 w Low gate charge: Q = 23nC KS (2) G w Threshold voltage V : 4.8V (typ) allowing 0 to 15V drive G(th) S (3-7) w Package creepage and clearance distance > 6.1mm w Kelvin source pin for optimized switching performance w ESD protected, HBM class 2 Part Number Package Marking 2 D PAK-7L UF3C120080B7S UF3C120080B7S Typical applications Any controlled environment such as w Telecom and Server Power w Industrial power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080B7S Rev. A, November 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 28.8 A C 1 I Continuous drain current D T = 100C 21 A C 2 T = 25C Pulsed drain current I 77 A C DM 3 L=15mH, I =2.8A E 58.5 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 190 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Reflow soldering temperature T reflow MSL 3 260 C solder 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.61 0.79 C/W qJC Datasheet: UF3C120080B7S Rev. A, November 2020 2