1700V-410mW SiC FET Rev. A, January 2020 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3C170400K3S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application CASE requiring standard gate drive. CASE D (2) Features w Typical on-resistance R of 410mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery G (1) w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 1 2 3 Typical applications S (3) w EV charging Part Number Package Marking w PV inverters w Switch mode power supplies UF3C170400K3S TO-247-3L UF3C170400K3S w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C170400K3S Rev. A, January 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1700 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 7.6 A C 1 I Continuous drain current D T = 100C 5.9 A C 2 T = 25C Pulsed drain current I 14 A C DM 3 L=15mH, I =1.25A E 11.7 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 100 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 1.2 1.5 C/W qJC Datasheet: UF3C170400K3S Rev. A, January 2020 2