1200V-16mW SiC FET Rev. B, December 2019 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3SC120016K4S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application CASE requiring standard gate drive. CASE D (1) Features w Typical on-resistance R of 16mW DS(on),typ w Maximum operating temperature of 175C G (4) w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance KS (3) w ESD protected, HBM class 2 S (2) w TO-247-4L package for faster switching, clean gate waveforms 1 2 3 4 Typical applications Part Number Package Marking w EV charging UF3SC120016K4S TO-247-4L UF3SC120016K4S w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC120016K4S Rev. B, December 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -20 to +20 V GS T = 25C 107 A C 1 I Continuous drain current D T = 100C 77 A C 2 T = 25C Pulsed drain current I 350 A C DM 3 L = 15mH, I =6.6A E 327 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 517 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.22 0.29 C/W qJC Datasheet: UF3SC120016K4S Rev. B, December 2019 2