X-On Electronics has gained recognition as a prominent supplier of UJ4C075018K4S MOSFET across the USA, India, Europe, Australia, and various other global locations. UJ4C075018K4S MOSFET are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

UJ4C075018K4S UnitedSiC

UJ4C075018K4S electronic component of UnitedSiC
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See Product Specifications
Part No.UJ4C075018K4S
Manufacturer: UnitedSiC
Category: MOSFET
Description: N-Channel 750V 81A (Tc) 385W (Tc) Through Hole TO-247-4
Datasheet: UJ4C075018K4S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 41.16 ea
Line Total: USD 41.16

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 15.3237
10 : USD 13.5205
100 : USD 11.4192
500 : USD 10.2024

0
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 22.4417
10 : USD 20.6254
30 : USD 19.7786

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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We are delighted to provide the UJ4C075018K4S from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UJ4C075018K4S and other electronic components in the MOSFET category and beyond.

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750V-18mW SiC FET Rev. A, October 2020 DATASHEET Description The UJ4C075018K4S is a 750V, 18mW G4 SiC FET. It is based on a UJ4C075018K4S unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads CASE CASE and any application requiring standard gate drive. D (1) Features w On-resistance R : 18mW (typ) DS(on) G (4) w Operating temperature: 175C (max) w Excellent reverse recovery: Q = 102nC rr KS (3) w Low body diode V : 1.14V FSD w Low gate charge: Q = 37.8nC G S (2) 1 2 w Threshold voltage V : 4.8V (typ) allowing 0 to 15V drive 3 4 G(th) w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Part Number Package Marking UJ4C075018K4S TO-247-4L UJ4C075018K4S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075018K4S Rev. A, October 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 750 V DS Gate-source voltage V DC -20 to +20 V GS T = 25C 81 A C 1 I Continuous drain current D T = 100C 60 A C 2 T = 25C Pulsed drain current I 205 A C DM 3 L=15mH, I =3.6A E 97.2 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 385 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.3 0.39 C/W qJC Datasheet: UJ4C075018K4S Rev. A, October 2020 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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