X-On Electronics has gained recognition as a prominent supplier of UJ4C075060K3S MOSFETs across the USA, India, Europe, Australia, and various other global locations. UJ4C075060K3S MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UJ4C075060K3S UnitedSiC

UJ4C075060K3S electronic component of UnitedSiC
UJ4C075060K3S UnitedSiC
UJ4C075060K3S MOSFETs
UJ4C075060K3S  Semiconductors

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See Product Specifications
Part No. UJ4C075060K3S
Manufacturer: UnitedSiC
Category: MOSFETs
Description: N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-3
Datasheet: UJ4C075060K3S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.3429 ea
Line Total: USD 7.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 1
Multiples : 1
1 : USD 7.3429
10 : USD 6.3706
100 : USD 5.2743
500 : USD 4.5928
1000 : USD 4.3151

0
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 10.7481
10 : USD 9.3255
30 : USD 8.8943

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UJ4C075060K3S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UJ4C075060K3S and other electronic components in the MOSFETs category and beyond.

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750V-58mW SiC FET Rev. A, October 2020 DATASHEET Description The UJ4C075060K3S is a 750V, 58mW G4 SiC FET. It is based on a UJ4C075060K3S unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads CASE CASE and any application requiring standard gate drive. D (2) Features w On-resistance R : 58mW (typ) DS(on) w Operating temperature: 175C (max) G (1) w Excellent reverse recovery: Q = 52nC rr w Low body diode V : 1.31V FSD w Low gate charge: Q = 37.8nC G 1 w Threshold voltage V : 4.8V (typ) allowing 0 to 15V drive 2 G(th) 3 S (3) w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number Package Marking UJ4C075060K3S TO-247-3L UJ4C075060K3S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075060K3S Rev. A, October 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 750 V DS Gate-source voltage V DC -20 to +20 V GS T = 25C 28 A C 1 I Continuous drain current D T = 100C 20.6 A C 2 T = 25C Pulsed drain current I 62 A C DM 3 L=15mH, I =1.8A E 24.3 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 155 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.75 0.97 C/W qJC Datasheet: UJ4C075060K3S Rev. A, October 2020 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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