X-On Electronics has gained recognition as a prominent supplier of VBE16R02 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE16R02 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE16R02 VBsemi Elec

Name: VBE16R02
Brand: VBsemi Elec
SKU: VBE16R02_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

VBE16R02 electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE16R02
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 600V 2A(Tc) 4V @ 250uA 4.4O @ 1.2A,10V TO252 RoHS
Datasheet:	VBE16R02 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4207 ea
Line Total: USD 0.42

Availability - 88
Ship by Fri. 15 Nov to Wed. 20 Nov

MOQ: 1 Multiples: 1
Pack Size: 1

VBE16R02 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

88

Ship by Fri. 15 Nov to Wed. 20 Nov

MOQ : 1
Multiples : 1

1 : USD 0.4207
10 : USD 0.4111
30 : USD 0.4054
100 : USD 0.3997

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO252 TO252

Brand Category
Vbsemi Elec Vbsemi Elec

Fet Type
NChannel NChannel

Drain To Source Voltagevdss
600 V 600 V

Continuous Drain Current Id @ 25°C
2 A (T C) 2 A (T C)

Vgsth Max @ Id
4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs
4.4O @ 1.2A,10V 4.4O @ 1.2A,10V

Power Dissipation-Max Ta 25°C
42 W (Tc) 42 W (Tc)

Drain Source Voltage Vdss
600 V 600 V

Continuous Drain Current Id
2 A 2 A

Power Dissipation Pd
42 W 42 W

Drain Source On Resistance Rdson@Vgs Id
4.4 Ohms @10V , 1.2A 4.4 Ohms @10V , 1.2A

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBE16R02 Alternative Parts

We are delighted to provide the VBE16R02 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE16R02 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE16R02 with MOSFET N Channel 600V 2A(Tc) 4V @ 250uA 4.4O @ 1.2A,10V TO252 RoHS is an electronic part manufactured by VBsemi Elec. It is a MOSFET transistor with an N-Channel, or normally closed, construction, and is rated at 600V and 2A (Tc) ideal for medium voltage, high-current applications. It has low-level threshold and gate-to-source voltages of 4V and 10V respectively, making it ideal for low-noise circuits. Its maximum on-state resistance is 4.4O when driving 1.2A and 250µA when driving at a lesser current. Lastly, it is made to meet RoHS standards, making it ideal for applications where these standards are needed.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
88 Ship by Fri. 15 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 0.4207 10 : USD 0.4111 30 : USD 0.4054 100 : USD 0.3997

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