X-On Electronics has gained recognition as a prominent supplier of VBFB16R04 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBFB16R04 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBFB16R04 VBsemi Elec

Name: VBFB16R04
Brand: VBsemi Elec
SKU: VBFB16R04_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBFB16R04 electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBFB16R04
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 600V 4A 4V @ 250uA 2.2O @ 3.7A,10V TO251 RoHS
Datasheet:	VBFB16R04 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6794 ea
Line Total: USD 0.68

Availability - 56
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

VBFB16R04 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

56

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 1
Multiples : 1

1 : USD 0.6794
10 : USD 0.5325
30 : USD 0.4681
80 : USD 0.3248
480 : USD 0.2639
800 : USD 0.2478

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO251 TO251

Brand Category

Vbsemi Elec Vbsemi Elec

Fet Type

N Channel N Channel

Drain To Source Voltagevdss

600 V 600 V

Continuous Drain Current Id @ 25°C

4 A 4 A

Vgsth Max @ Id

4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs

2.2O @ 3.7A,10V 2.2O @ 3.7A,10V

Power Dissipation-Max Ta 25°C

125 W 125 W

Drain Source Voltage Vdss

600 V 600 V

Continuous Drain Current Id

4 A 4 A

Drain Source On Resistance Rdson@Vgs Id

2.2 Ohms @10V , 3.7A 2.2 Ohms @10V , 3.7A

Power Dissipation Pd

125 W 125 W

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBFB16R04 Alternative Parts

We are delighted to provide the VBFB16R04 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBFB16R04 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

VBFB16R04 is a high-performance N-channel MOSFET manufactured by VBsemi Elec. It is suitable for high-current switching applications such as lighting, motor control, and power supplies. The device features a maximum drain-source voltage (VDS) of 600V, a maximum drain current (ID) rating of 4A, and a gate threshold voltage (VGS) rating of 4V @ 250uA. It also features a low on-resistance (RDS(on)) of 2.2O @ 3.7A and a maximum drain-source breakdown voltage (BVDSS) of 10V. The device is RoHS-compliant and is available in a TO251 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
56 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 0.6794 10 : USD 0.5325 30 : USD 0.4681 80 : USD 0.3248 480 : USD 0.2639 800 : USD 0.2478

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Hot	VBI1322 MOSFET N Trench 30V 6.8A 1.5V @ 250uA 45 mÎ© @ 4.5A,2.5V SOT-89-3 RoHS Stock : 420 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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