X-On Electronics has gained recognition as a prominent supplier of VBJ1101M MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBJ1101M MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBJ1101M VBsemi Elec

Name: VBJ1101M
Brand: VBsemi Elec
SKU: VBJ1101M_VBsemi Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBJ1101M electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBJ1101M
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 100V 4.5A 3V @ 250uA 110mO @ 6A,10V SOT223-3 RoHS
Datasheet:	VBJ1101M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5408 ea
Line Total: USD 0.54

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBJ1101M More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 0.5408 10 : USD 0.4435 30 : USD 0.4027 100 : USD 0.3502 500 : USD 0.2724 1000 : USD 0.2588

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT223 - 3 SOT223 - 3
Brand Category Vbsemi Elec Vbsemi Elec
Fet Type N Channel N Channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 4.5 A 4.5 A
Vgsth Max @ Id 3V @ 250uA 3V @ 250uA
Rds On Max @ Id Vgs 110mO @ 6A,10V 110mO @ 6A,10V
Power Dissipation-Max Ta 25°C 1.7 W 1.7 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 4.5 A 4.5 A
Power Dissipation Pd 1.7 W 1.7 W
Drain Source On Resistance Rdson@Vgs Id 110 mOhms @10V , 6A 110 mOhms @10V , 6A
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Type N Channel N Channel

We are delighted to provide the VBJ1101M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBJ1101M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBJ1101M is an N-channel MOSFET manufactured by VBsemi Elec. It has a drain-source voltage rating of 100V and is capable of conducting up to 4.5A of current. Gate voltage to perform Source drain conduction is 3V with a typical source-drain saturation current of 250uA. The gate-source resistance is 110mO and the continuous channel current is 6A at 10V. The package is a SOT223-3 and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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