X-On Electronics has gained recognition as a prominent supplier of VBJ2102M MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBJ2102M MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBJ2102M VBsemi Elec

Name: VBJ2102M
Brand: VBsemi Elec
SKU: VBJ2102M_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBJ2102M electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBJ2102M
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET P Trench 100V 3A 4V @ 250uA 230 mÎ© @ 2A,6V SOT-223 RoHS
Datasheet:	VBJ2102M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6054 ea
Line Total: USD 0.61

Availability - 1584
Ship by Tue. 13 May to Fri. 16 May

MOQ: 1 Multiples: 1
Pack Size: 1

VBJ2102M More Buying Options & Price Grid(s)

Availability Price Buy Price Quantity

1584

Ship by Tue. 13 May to Fri. 16 May

MOQ : 1
Multiples : 1

1 : USD 0.6054
10 : USD 0.526
30 : USD 0.4926
100 : USD 0.303
500 : USD 0.296
1000 : USD 0.2891

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Brand

Vbsemi Elec Vbsemi Elec

Rohs

Y Y

Package

SOT - 223 SOT - 223

Fet Type

P Channel P Channel

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

3 A 3 A

Vgsth Max @ Id

4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs

230mO @ 2A,6V 230mO @ 2A,6V

Power Dissipation-Max Ta 25°C

6.5 W 6.5 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

3 A 3 A

Power Dissipation Pd

6.5 W 6.5 W

Drain Source On Resistance Rdson@Vgs Id

230 mOhms @6V , 2A 230 mOhms @6V , 2A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

VBJ2102M Alternative Parts

We are delighted to provide the VBJ2102M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBJ2102M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBJ2102M is a MOSFET P Trench device manufactured by VBsemi Elec. It is a 100V, 3A rated device in a 6V SOT-223 RoHS package. The VBJ2102M has a 4V @ 250uA gate to source threshold voltage and a 230 mÎ© @ 2A channel resistance. This component is ideal for use in high side switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1584 Ship by Tue. 13 May to Fri. 16 May MOQ : 1 Multiples : 1	1 : USD 0.6054 10 : USD 0.526 30 : USD 0.4926 100 : USD 0.303 500 : USD 0.296 1000 : USD 0.2891

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