X-On Electronics has gained recognition as a prominent supplier of VBM1101N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBM1101N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBM1101N VBsemi Elec

Name: VBM1101N
Brand: VBsemi Elec
SKU: VBM1101N_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

VBM1101N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBM1101N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 100V 100A 3.5V @ 250uA 10 mÎ© @ 20A,4.5V TO-220AB RoHS
Datasheet:	VBM1101N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.2546 ea
Line Total: USD 1.25

Availability - 1
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

VBM1101N More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 1
Multiples : 1

1 : USD 1.2546
10 : USD 1.0484
50 : USD 0.8365
100 : USD 0.7352
500 : USD 0.6731
1000 : USD 0.6419

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Brand
Vbsemi Elec Vbsemi Elec

Rohs
Y Y

Package
TO - 220AB TO - 220AB

Fet Type
N Channel N Channel

Drain To Source Voltagevdss
100 V 100 V

Continuous Drain Current Id @ 25°C
100 A 100 A

Vgsth Max @ Id
3.5V @ 250uA 3.5V @ 250uA

Rds On Max @ Id Vgs
10mO @ 20A,4.5V 10mO @ 20A,4.5V

Power Dissipation-Max Ta 25°C
250 W 250 W

Drain Source Voltage Vdss
100 V 100 V

Continuous Drain Current Id
100 A 100 A

Drain Source On Resistance Rdson@Vgs Id
10 mOhms @4.5V , 20A 10 mOhms @4.5V , 20A

Power Dissipation Pd
250 W 250 W

Gate Threshold Voltage Vgsth@Id
3.5 V @250uA 3.5 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBM1101N Alternative Parts

We are delighted to provide the VBM1101N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBM1101N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBM1101N is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by VBsemi Elec. The MOSFET has an N Trench structure and is rated to handle 100V, 100A. The part is supplied in a TO-220AB package and is RoHS compliant. The threshold voltage is 3.5V at 250uA and the on-resistance is 10 mÎ© at 20A. Additionally, the cut-off voltage is 4.5V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
1 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 1.2546 10 : USD 1.0484 50 : USD 0.8365 100 : USD 0.7352 500 : USD 0.6731 1000 : USD 0.6419

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Hot	VBM1104N MOSFET N Channel 100V 45A 3V @ 250uA 32mO @ 45A,10V TO-220AB RoHS Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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