X-On Electronics has gained recognition as a prominent supplier of VBM1101N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBM1101N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBM1101N VBsemi Elec

Name: VBM1101N
Brand: VBsemi Elec
SKU: VBM1101N_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBM1101N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBM1101N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 100V 100A 3.5V @ 250uA 10 mÎ© @ 20A,4.5V TO-220AB RoHS
Datasheet:	VBM1101N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.7236 ea
Line Total: USD 1.72

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBM1101N More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 25 Apr to Wed. 30 Apr MOQ : 1 Multiples : 1	1 : USD 1.7236 10 : USD 1.4143 50 : USD 0.8677 100 : USD 0.7494 500 : USD 0.678 1000 : USD 0.6423

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Brand Vbsemi Elec Vbsemi Elec
Rohs Y Y
Package TO - 220AB TO - 220AB
Fet Type N Channel N Channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 100 A 100 A
Vgsth Max @ Id 3.5V @ 250uA 3.5V @ 250uA
Rds On Max @ Id Vgs 10mO @ 20A,4.5V 10mO @ 20A,4.5V
Power Dissipation-Max Ta 25°C 250 W 250 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 100 A 100 A
Drain Source On Resistance Rdson@Vgs Id 10 mOhms @4.5V , 20A 10 mOhms @4.5V , 20A
Power Dissipation Pd 250 W 250 W
Gate Threshold Voltage Vgsth@Id 3.5 V @250uA 3.5 V @250uA
Type N Channel N Channel

We are delighted to provide the VBM1101N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBM1101N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBM1101N is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by VBsemi Elec. The MOSFET has an N Trench structure and is rated to handle 100V, 100A. The part is supplied in a TO-220AB package and is RoHS compliant. The threshold voltage is 3.5V at 250uA and the on-resistance is 10 mÎ© at 20A. Additionally, the cut-off voltage is 4.5V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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