X-On Electronics has gained recognition as a prominent supplier of VBJ1201K MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBJ1201K MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBJ1201K VBsemi Elec

Name: VBJ1201K
Brand: VBsemi Elec
SKU: VBJ1201K_VBsemi Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBJ1201K electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBJ1201K
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 200V 1A 4V @ 250uA 1.2 Î© @ 580mA,10V SOT-223 RoHS
Datasheet:	VBJ1201K Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5467 ea
Line Total: USD 0.55

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBJ1201K More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 06 Jan to Thu. 09 Jan MOQ : 1 Multiples : 1	1 : USD 0.5467 10 : USD 0.4494 30 : USD 0.4085 100 : USD 0.356 500 : USD 0.2724 1000 : USD 0.2588

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Brand Vbsemi Elec Vbsemi Elec
Rohs Y Y
Package SOT - 223 SOT - 223
Fet Type N Channel N Channel
Drain To Source Voltagevdss 200 V 200 V
Continuous Drain Current Id @ 25°C 1 A 1 A
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 1.2O @ 580mA,10V 1.2O @ 580mA,10V
Power Dissipation-Max Ta 25°C 3.1 W 3.1 W
Drain Source Voltage Vdss 200 V 200 V
Continuous Drain Current Id 1 A 1 A
Power Dissipation Pd 3.1 W 3.1 W
Drain Source On Resistance Rdson@Vgs Id 1.2 Ohms @10V , 580mA 1.2 Ohms @10V , 580mA
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the VBJ1201K from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBJ1201K and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBJ1201K is a MOSFET N Trench 200V 1A 4V @ 250uA 1.2 Î© @ 580mA,10V SOT-223 RoHS made by VBsemi Elec. It is a power MOSFET transistor with an N-type Trench architecture. It has a maximum voltage rating of 200V, a maximum current rating of 1A, and a maximum gate-to-source voltage rating of 4V. It has an on-state resistance of 1.2ohms at 580mA of current and an off-state resistance of 250uA at 10V. It has a package size of SOT-223 and it is RoHS certified.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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