X-On Electronics has gained recognition as a prominent supplier of VBJ1695 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBJ1695 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBJ1695 VBsemi Elec

VBJ1695 electronic component of VBsemi Elec
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See Product Specifications
Part No.VBJ1695
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: MOSFET N Trench 60V 4.5A 2.5V @ 250uA 85 mΩ @ 3A,4.5V SOT-223-3 RoHS
Datasheet: VBJ1695 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5135 ea
Line Total: USD 0.51 
Availability - 40
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5135
10 : USD 0.4241
30 : USD 0.3852
100 : USD 0.3365
500 : USD 0.2568
1000 : USD 0.2431

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VBJ1695 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBJ1695 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
Stock Image VBJ2102M
MOSFET P Trench 100V 3A 4V @ 250uA 230 mΩ @ 2A,6V SOT-223 RoHS
Stock : 1980
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET P Trench 35V 6.2A 1.8V @ 250uA 60 mΩ @ 4A,4.5V SOT-223 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock : 545
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 60V 300mA 2.5V @ 250uA 4 Ω @ 200mA,4.5V SC-70-3 RoHS
Stock : 291
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET P Trench 20V 3.1A 1.5V @ 250uA 140 mΩ @ 300mA,1.8V SC-70-3 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The VBJ1695 is a P-channel MOSFET with a Trench60V 4.5A 2.5V @ 250uA 85 mΩ @ 3A,4.5V SOT-223-3 RoHS constructed by VBSemi Elec. It has a voltage breakdown rating of 60 V, a continuous drain current rating of 4.5A, a continuous gate-source voltage of 2.5V, and a channel resistance of 85 mΩ. It operates at a gate-source voltage of between 4.5V and -2V with a maximum gate-source leakage current of 250 uA. The drain-source on-state resistance is 2.2mΩ at VGS=10 V and 4.5A. This device meets the requirements of RoHS standard and is available in SOT-223-3 packaging.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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