VS-10WQ045FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable D-PAK (TO-252AA) Anode Anode High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak PRODUCT SUMMARY of 260 C Package D-PAK (TO-252AA) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 I 10 A F(AV) V 45 V R DESCRIPTION V at I 0.53 V F F The VS-10WQ045FN-M3 surface mount Schottky rectifier I 15 mA at 125 C has been designed for applications requiring low forward RM drop and small foot prints on PC board. Typical applications T max. 175 C J are in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery E 20 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 45 V RRM I t = 5 s sine 400 A FSM p V 10 A , T = 125 C 0.53 V F pk J T Range -40 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10WQ045FN-M3 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 157 C, rectangular waveform 10 A F(AV) C See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 400 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 75 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93284 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10WQ045FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.63 T = 25 C J 20 A 0.80 Maximum forward voltage drop (1) V V FM See fig. 1 10 A 0.53 T = 125 C J 20 A 0.71 T = 25 C 1 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Threshold voltage V 0.255 V F(TO) T = T maximum J J Forward slope resistance r 22 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 760 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +175 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Maximum thermal resistance, R 50 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 10WQ045FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93284 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000