VS-12CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A Base FEATURES common Popular D-PAK outline cathode 4 Center tap configuration Small foot print, surface mountable Low forward voltage drop High frequency operation 2 Common Guard ring for enhanced ruggedness and long term cathode D-PAK (TO-252AA) 13 reliability Anode Anode Compliant to RoHS Directive 2002/95/EC Meets MSL level 1, per J-STD-020, LF maximum peak of PRODUCT SUMMARY 260 C Package D-PAK (TO-252AA) DESCRIPTION I 2 x 6 A F(AV) The VS-12CWQ03FNPbF surface mount, center tap, V 30 V R Schottky rectifier series has been designed for applications V at I 0.37 V F F requiring low forward drop and small foot prints on PC I 58 mA at 125 C board. Typical applications are in disk drives, switching RM power supplies, converters, freewheeling diodes, battery T max. 150 C J charging, and reverse battery protection. Diode variation Common cathode E 10 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 12 A F(AV) V 30 V RRM I t = 5 s sine 320 A FSM p V 6 Apk, T = 125 C (per leg) 0.37 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12CWQ03FNPbF UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 6 forward current I 50 % duty cycle at T = 135 C, rectangular waveform A F(AV) C per device 12 See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 320 non-repetitive surge current per leg I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 130 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 2.0 A, L = 5 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94132 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-12CWQ03FNPbF Schottky Rectifier, 2 x 6 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 6 A 0.47 T = 25 C J Maximum forward 12 A 0.55 (1) voltage drop per leg V V FM 6 A 0.37 See fig. 1 T = 125 C J 12 A 0.49 Maximum reverse T = 25 C 3 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 58 See fig. 2 J Threshold voltage V 0.196 V F(TO) T = T maximum J J Forward slope resistance r 21.66 m t Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 590 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 55 to 150 C J Stg temperature range per leg 3.0 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 1.5 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 12CWQ03FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94132 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11