VS-15ETH06SPbF, VS-15ETH06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt 2 FEATURES TO-263AB (D PAK) TO-262AA Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Single die center tap module Base cathode Meets MSL level 1, per J-STD-020, LF maximum 2 2 peak of 260 C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 3 N/C Anode N/C DESCRIPTION/APPLICATIONS Anode VS-15ETH06SPbFVS-15ETH06-1PbF State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and t (typical) 22 ns rr reliability characteristics. I 15 A F(AV) These devices are intended for use in PFC boost stage in the V 600 V R AC/DC section of SMPS, inverters or as freewheeling 2 Package TO-263AB (D PAK), TO-262AA diodes. Circuit configuration Single diode The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 140 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 120 A FSM J Peak repetitive forward current I 30 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 1.8 2.2 F Forward voltage V F I = 15 A, T = 150 C - 1.3 1.6 F J V = V rated - 0.2 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 500 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 05-Dec-14 Document Number: 94003 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15ETH06SPbF, VS-15ETH06-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35 F F R Reverse recovery time t ns rr T = 25 C -29 - J = 125 C - 75 - T J I = 15 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7 - J V = 390 V R T = 25 C - 57 - J Reverse recovery charge Q C rr T = 125 C - 300 - J Reverse recovery time t -51 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A RRM J F V = 390 V R Reverse recovery charge Q - 580 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - +175 C J Stg temperature range Thermal resistance, R -1.01.3 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 PAK) 15ETH06S Case style TO-263AB (D Marking device Case style TO-262AA 15ETH06-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J T = 175 C J 1 T = 100 C T = 150 C J J 10 T = 25 C J 0.1 T = 25 C 0.01 J 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Dec-14 Document Number: 94003 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous ForwardCurrent (A) F I - Reverse Current (A) R