VS-15ETH06SPbF, VS-15ETH06-1PbF
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Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
FEATURES
Hyperfast recovery time
Low forward voltage drop
Low leakage current
175 C operating junction temperature
2
TO-263AB (D PAK) TO-262AA Single die center tap module
Base
Meets MSL level 1, per J-STD-020, LF maximum
cathode
peak of 260 C
2
2
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1 3 1 3
DESCRIPTION / APPLICATIONS
N/C Anode N/C Anode
State of the art hyperfast recovery rectifiers designed with
VS-15ETH06SPbFVS-15ETH06-1PbF
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
PRODUCT SUMMARY
guarantee the best overall performance, ruggedness and
2
Package TO-263AB (D PAK), TO-262AA
reliability characteristics.
I 15 A
F(AV)
These devices are intended for use in PFC boost stage in the
V 600 V
R
AC/DC section of SMPS, inverters or as freewheeling
V at I 1.3 V
F F
diodes.
t (typ.) 22 ns
rr
The extremely optimized stored charge and low recovery
T max. 175 C
J
current minimize the switching losses and reduce over
Diode variation Single diode
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS
Peak repetitive reverse voltage V 600 V
RRM
Average rectified forward current I T = 140 C 15
F(AV) C
Non-repetitive peak surge current I T = 25 C 120 A
FSM J
Peak repetitive forward current I 30
FM
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, V ,
BR
I = 100 A 600 - -
R
blocking voltage V
R
V
I = 15 A - 1.8 2.2
F
Forward voltage V
F
I = 15 A, T = 150 C - 1.3 1.6
F J
V = V rated - 0.2 50
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - 30 500
J R R
Junction capacitance C V = 600 V - 20 - pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
Revision: 09-Jul-15 Document Number: 94003
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-15ETH06SPbF, VS-15ETH06-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
C
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30
F F R
I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35
F F R
Reverse recovery time t ns
rr
T = 25 C -29 -
J
= 125 C - 75 -
T
J
I = 15 A
F
T = 25 C - 3.5 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 7 -
J
V = 390 V
R
T = 25 C - 57 -
J
Reverse recovery charge Q C
rr
T = 125 C - 300 -
J
Reverse recovery time t -51 - ns
rr
I = 15 A
F
Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A
RRM J F
V = 390 V
R
Reverse recovery charge Q - 580 - nC
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -65 - 175 C
J Stg
temperature range
Thermal resistance,
R -1.01.3
thJC
junction to case per leg
Thermal resistance,
R Typical socket mount - - 70 C/W
thJA
junction to ambient per leg
Thermal resistance, Mounting surface, flat, smooth and
R -0.5 -
thCS
case to heatsink greased
-2.0 - g
Weight
-0.07 - oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
2
PAK) 15ETH06S
Case style TO-263AB (D
Marking device
Case style TO-262AA 15ETH06-1
100 1000
T = 175 C
J
100
T = 150 C
J
10
T = 125 C
J
T = 175 C
J
1
T = 100 C
T = 150 C
J
J
10
T = 25 C
J
0.1
T = 25 C
0.01
J
0.001
1
0
0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600
V - Forward Voltage Drop (V)
V - Reverse Voltage (V)
F
R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 09-Jul-15 Document Number: 94003
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Instantaneous ForwardCurrent (A)
F
I - Reverse Current (A)
R