X-On Electronics has gained recognition as a prominent supplier of 1N4151WS-E3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4151WS-E3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4151WS-E3-18 Vishay

1N4151WS-E3-18 electronic component of Vishay
1N4151WS-E3-18 Vishay
1N4151WS-E3-18 Diodes - General Purpose, Power, Switching
1N4151WS-E3-18  Semiconductors

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Part No. 1N4151WS-E3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 75volt 500mA 2ns
Datasheet: 1N4151WS-E3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
754: USD 0.0862 ea
Line Total: USD 64.99 
Availability - 9576
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ: 754  Multiples: 1
Pack Size: 1
Availability Price Quantity
9576
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 754
Multiples : 1
754 : USD 0.0862
1139 : USD 0.0571
1149 : USD 0.0565
1412 : USD 0.046
1429 : USD 0.0455
2008 : USD 0.0324
2500 : USD 0.026
3000 : USD 0.023
6000 : USD 0.0167

9255
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 0.1375
10 : USD 0.0925
100 : USD 0.0612
500 : USD 0.046
1000 : USD 0.0385
2500 : USD 0.0363
5000 : USD 0.0341
10000 : USD 0.0264
20000 : USD 0.0264

8647
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1359
Multiples : 1
1359 : USD 0.052

9576
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1429
Multiples : 1
1429 : USD 0.0455
2008 : USD 0.0324
2500 : USD 0.026
3000 : USD 0.023
6000 : USD 0.0167

   
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We are delighted to provide the 1N4151WS-E3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4151WS-E3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N4151WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4151WS-E3-08 or 1N4151WS-E3-18 1N4151WS Single A5 Tape and reel 1N4151WS-HE3-08 or 1N4151WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 50 V R Repetitive peak reverse voltage V 75 V RRM Average rectified current half wave f 50 Hz I 150 mA F(AV) (1) rectification with resistive load Surge current t < 1 s and T = 25 C I 500 mA j FSM (1) Power dissipation P 200 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.8, 06-Jul-17 Document Number: 85847 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4151WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F V = 50 V I 50 nA R R Leakage current V = 20 V, T = 150 C I 50 A R j R Reverse breakdown voltage I = 5 A (pulsed) V 75 V R (BR) Capacitance V = V = 0 V 2 pF F R I = 10 mA, I = 10 mA F R t 4ns rr i = 1 mA R Reverse recovery time I = 10 mA, i = 1 mA, F R t 2ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T =100C 100 j 800 600 10 25C 400 1 0.1 200 0 0.01 0 20 40 60 80 100 120 140 160180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18743 T - Ambient Temperature (C) 18742 V - Forward Voltage (V) amb F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 10000 T =25C j 1.1 T =25C j f=1kHz f=1MHz 1000 1.0 100 0.9 0.8 10 0.7 1 0 2468 10 0.01 0.1 110 100 18664 V - Reverse Voltage (V) R I - Forward Current (mA) 18662 F Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.8, 06-Jul-17 Document Number: 85847 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 r - Dynamic Forward Resistance() f I- Forward Current (mA) F P - Admissible Power Dissipation (mW) C (V )/C (0 V) - Relative Capacitance (pF) D R D tot

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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