333 3 1N4154 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4154 1N4154TR or 1N4154TAP 1N4154 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 35 V RRM Reverse voltage V 25 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.1, 24-Feb-2020 Document Number: 85524 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 1N4154 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 30 mA V 0.88 1 V F F V = 25 V I 9100 nA R R Reverse current V = 25 V, T = 150 C I 100 A R j R I = 5 A, t /T = 0.01, R p Breakdown voltage V 35 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 4pF D V = 50 mV HF I = I = 10 mA, F R 4 i = 1 mA R Reverse recovery time t ns rr I = 10 mA, V = 6 V, F R 2 i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 3.0 Scattering Limit 2.5 f = 1 MHz 10 T = 25 C j 2.0 1.5 1 1.0 0.1 0.5 V = 25 V R 0.01 0 200 100 0 40 80 120 160 0.1 1 10 T - Junction Temperature (C) 94 9156 V - Reverse Voltage (V) 94 9154 j R Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 1000 T = 100 C j 100 10 T = 25 C j 1 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9152 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.1, 24-Feb-2020 Document Number: 85524 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F C - Diode Capacitance (pF) D