333 3 1N4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4448 1N4448TAP or 1N4448TR V4448 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +150 C stg Rev. 1.4, 24-Feb-2020 Document Number: 81858 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 1N4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 5 mA V 0.620 0.720 V F F Forward voltage I = 100 mA V 1V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 4pF R HF D Rectification efficiency V = 2 V, f = 100 MHz r45 % HF I = I = 10 mA, i = 1 mA t 8ns F R R rr Reverse recovery time I = 10 mA, V = 6 V, F R t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.2 1.0 I = 100 mA F T = 25 C j 100 0.8 10 mA 0.6 1m A Scattering Limit 10 0.4 0.1 mA 0.2 1 0 - 30 0 30 60 90 120 1 100 10 94 9098 V - Reverse Voltage (V) 94 9169 T - Junction Temperature (C) R j Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage 1000 1N4448 100 Scattering Limit 10 1 T = 25 C j 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9171 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.4, 24-Feb-2020 Document Number: 81858 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) V- Forward Voltage (V) F F I - Reverse Current (nA) R
