1N4448W
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
Silicon epitaxial planar diode
Fast switching diode
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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DESIGN SUPPORT TOOLS
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
1N4448W-E3-08 or 1N4448W-E3-18
1N4448W Single A3 Tape and reel
1N4448W-HE3-08 or 1N4448W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V 75 V
R
Repetitive peak reverse voltage V 100 V
RRM
Average rectified current half wave
f 50 Hz I 150 mA
(1) F(AV)
rectification with resistive load
Surge current t < 1 s and T = 25 C I 500 mA
j FSM
(1)
Power dissipation P 500 mW
tot
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 350 K/W
thJA
Junction temperature T 150 C
j
Storage temperature T -65 to +150 C
stg
Operating temperature T -55 to +150 C
op
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.6, 23-Feb-18 Document Number: 85722
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4448W
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I = 100 mA V 1V
F F
Forward voltage
I = 5 mA V 0.62 0.72 V
F F
V = 20 V I 25 nA
R R
Leakage current V = 75 V I 5A
R R
V = 20 V, T = 150 C I 50 A
R J R
Capacitance V = V = 0 V 4 pF
F R
I = 10 mA, i = 1 mA,
F R
Reverse recovery time t 4ns
rr
V = 6 V, R = 100
R L
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
mW
3
10 1000
900
2
T = 100 C 800
10
j
700
P
T = 25 C tot
j
10
600
500
1
400
300
- 1
10
200
100
- 2
10
0
0 12
0 100 200 C
18105 V (V)
F
17439
T
amb
Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
4
10
T = 25 C
j
T = 25 C
5 j 1.1
f = 1 MHz
f = 1 kHz
2
3
10
1.0
5
2
0.9
2
10
5
0.8
2
10
5
0.7
2
082416 0
-2 -1 2
10 1011100
17440 V (V)
R
17438 I (mA)
F
Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.6, 23-Feb-18 Document Number: 85722
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
R () I (mA)
f F
C (V )
D R
C (0 V)
D