X-On Electronics has gained recognition as a prominent supplier of 1N5060TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5060TR Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

1N5060TR Vishay

1N5060TR electronic component of Vishay
1N5060TR Vishay
1N5060TR Rectifiers
1N5060TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. 1N5060TR
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM
Datasheet: 1N5060TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5719 ea
Line Total: USD 0.57 
Availability - 11656
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14540
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 164
Multiples : 1
164 : USD 0.3844
189 : USD 0.3318
190 : USD 0.3303
209 : USD 0.3004
250 : USD 0.2964
500 : USD 0.2602
1000 : USD 0.2201
3000 : USD 0.2082
6000 : USD 0.2047

11656
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5719
10 : USD 0.4026
100 : USD 0.317
500 : USD 0.2458
1000 : USD 0.1989
2500 : USD 0.1958
5000 : USD 0.183
10000 : USD 0.183
25000 : USD 0.183

14540
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 174
Multiples : 1
174 : USD 0.3618

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N5060TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5060TR and other electronic components in the Rectifiers category and beyond.

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1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed axial-leaded glass envelope Controlled avalanche characteristics Low reverse current High surge current loading Material categorization: 949539 For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: SOD-57 Rectification diode, general purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5062 1N5062TR 5000 per 10 tape and reel 25 000 1N5062 1N5062TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5059 V = 200 V I = 2 A SOD-57 R F(AV) 1N5060 V = 400 V I = 2 A SOD-57 R F(AV) 1N5061 V = 600 V I = 2 A SOD-57 R F(AV) 1N5062 V = 800 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 1N5059 V = V 200 V R RRM 1N5060 V = V 400 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage 1N5061 V = V 600 V R RRM 1N5062 V = V 800 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM T = 45 K/W, T = 50 C I 2A thJA amb F(AV) Average forward current T = 100 K/W, T = 75 C I 0.8 A thJA amb F(AV) Pulse energy in avalanche mode, non I = 1 A, inductive load E 20 mJ (BR)R R repetitive (inductive load switch off) Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.7, 12-Sep-12 Document Number: 86000 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT I = 1 A V -- 1 V F F Forward voltage I = 2.5 A V - - 1.15 V F F V = V I -- 1 A R RRM R Reverse current V = V , T = 100 C I - - 10 A R RRM j R V = V , T = 150 C I - - 100 A R RRM j R 1N5059 V 225 - 1600 V (BR)R 1N5060 V 450 - 1600 V (BR)R Breakdown voltage I = 100 A R 1N5061 V 650 - 1600 V (BR)R 1N5062 V 900 - 1600 V (BR)R Diode capacitance V = 0 V, f = 1 MHz C -40 - pF R D Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -- 4 s F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 200 3.0 V =V R RRM V =V R RRM half sinewave 2.5 R = 160 thJA 1N5062 45 K/W R =4 5 K/W thJA 2.0 l =10 mm 120 100 K/W 1N5061 1.5 160 K/W 80 1N5060 1.0 1N5059 40 R = 100 K/W thJA 0.5 PCB :d=2 5m m 0 0.0 02 04 06 08 0 100 120 140 160 180 25 50 75 100 125 150 175 T - Ambient T emperature (C) amb 15764 T - Junction Temperature (C) j 15763 1 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 V =V R RRM T =175C j 10 100 T =25C j 1 10 0.1 1 0.01 0.1 0.001 25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 T - Junction Temperature (C) 15765 j 15762 V - Forward Voltage(V) F Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage Rev. 1.7, 12-Sep-12 Document Number: 86000 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current ( A) P - Reverse Power Dissipation ( mW ) R R I - Forward Current ( A ) I- Average Forward Current (A) F FA V

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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BEYSCHLAG
DALE
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DLE
DRALORIC / VISHAY
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GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
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Micro-Measurements (Division of Vishay Precision Group)
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SILICONIX
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SIX
SPD
SPECTROL
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SPP
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TECHNO
VIR
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Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
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Vishay / Sfernice
Vishay / Siliconix
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VISHAY ELECTRO-FILMS
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Vishay Huntington Electric Inc.
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