VS-20ETF..PbF Series, VS-20ETF..-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base 150 C max operating junction temperature cathode Low forward voltage drop and short reverse 2 recovery time Designed and qualified according to JEDEC-JESD47 1 3 Compliant to RoHS Directive 2002/95/EC Cathode Anode Halogen-free according to IEC 61249-2-21 TO-220AC definition (-M3 only) APPLICATIONS PRODUCT SUMMARY These devices are intended for use in output rectification Package TO-220AC and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on I 20 A F(AV) conducted EMI should be met. V 800 V, 1000 V, 1200 V R V at I 1.31 V F F DESCRIPTION I 355 A FSM The VS-20ETF... fast soft recovery rectifier series has been t 95 ns rr optimized for combined short reverse recovery time and low T max. 150 C J forward voltage drop. Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.6 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 800 to 1200 V RRM I Sinusoidal waveform 20 F(AV) A I 355 FSM t 1 A, 100 A/s 95 ns rr V 20 A, T = 25 C 1.31 V F J T Range - 40 to 150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM PEAK I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-20ETF08PbF, VS-20ETF08-M3 800 900 VS-20ETF10PbF, VS-20ETF10-M3 1000 1100 6 VS-20ETF12PbF, VS-20ETF12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 300 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 635 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A s Revision: 26-Oct-11 Document Number: 94098 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20ETF..PbF Series, VS-20ETF..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I FM Reverse recovery time t 400 ns rr I at 20 Apk t F rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETF08 Marking device Case style TO-220AC 20ETF10 20ETF12 Revision: 26-Oct-11 Document Number: 94098 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000