VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Very low forward voltage drop 150 C max. operating junction temperature Designed and qualified according to JEDEC-JESD47 TO-220AC TO-220AB Compliant to RoHS Directive 2002/95/EC Base Halogen-free according to IEC 61249-2-21 cathode Cathode to definition (-M3 only) base 2 2 APPLICATIONS Input rectification Vishay Semiconductors switches and output rectifiers which are available in identical package outlines 13 1 3 Cathode Anode Anode Anode VS-20ETS.. VS-20ATS.. DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. PRODUCT SUMMARY Package TO-220AC, TO-220AB These devices are intended for use in main rectification (single or three phase bridge). I 20 A F(AV) V 800 V, 1200 V R V at I 1.1 V F F I 300 A FSM T max. 150 C J Diode variation Single die, common anode OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 16.3 21 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 800/1200 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T - 40 to 150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETS08PbF, VS-20ETS08-M3 800 900 VS-20ATS08PbF, VS-20ATS08-M3 1 VS-20ETS12PbF, VS-20ETS12-M3 1200 1300 VS-20ATS12PbF, VS-20ATS12-M3 Revision: 03-Nov-11 Document Number: 94341 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.1 V FM J Forward slope resistance r 10.4 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.3 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETS08 Case style TO-220AC 20ETS12 Marking device 20ATS08 Case style TO-220AB 20ATS12 Revision: 03-Nov-11 Document Number: 94341 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000