VS-20ETS08SPbF, VS-20ETS12SPbF www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 20 A FEATURES Meets MSL level 1, per J-STD-020, Base LF maximum peak of 260 C cathode 2 Designed and qualified according to JEDEC-JESD47 2 Material categorization: 3 For definitions of compliance please see www.vishay.com/doc 99912 1 3 1 2 Anode Anode TO-263AB (D PAK) APPLICATIONS Input rectification PRODUCT SUMMARY Vishay Semiconductors switches and output rectifiers 2 Package TO-263AB (D PAK) which are available in identical package outlines I 20 A F(AV) DESCRIPTION V 800 V, 1200 V R The VS-20ETS...SPbF rectifier High Voltage Series has been V at I 1.1 V F F optimized for very low forward voltage drop, with moderate I 300 A FSM leakage. The glass passivation technology used has reliable operation up to 150 C junction temperature. T max. 150 C J Diode variation Single die OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 16.3 21 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 800/1200 V RRM I 300 A FSM V 20 A, T = 25 C 1.1 V F J T - 40 to 150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE RRM RSM I AT 150 C RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE mA V V VS-20ETS08SPbF 800 900 1 VS-20ETS12SPbF 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 26-Jul-13 Document Number: 94340 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20ETS08SPbF, VS-20ETS12SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.1 V FM J Forward slope resistance r 10.4 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T - 40 to 150 C J Stg Maximum thermal resistance, R DC operation 1.3 thJC junction to case Maximum thermal resistance, (1) 2 R For D PAK version 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6.0 (5.0) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETS08S 2 Marking device Case style D PAK (SMD-220) 20ETS12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 26-Jul-13 Document Number: 94340 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000