LQA10T200C, LQA10N200C Qspeed Family 200 V, 10 A Common-Cathode Diode Product Summary General Description This device has the lowest Q of any 200 V RR I per diode 5 A F(AVG) Silicon diode. Its recovery characteristics V 200 V RRM increase efficiency, reduce EMI and eliminate Q (Typ at 125 C) 32.4 nC RR snubbers. I (Typ at 125 C) 2.6 A RRM Softness t /t (Typ at 125 C) 0.39 b a Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Pin Assignment Motor drive circuits DC-AC inverters Features Low Q , Low I , Low t RR RRM RR High dI /dt capable (1000A/s) F Soft recovery TO-220AB TO-252 DPAK Benefits LQA10T200C LQA10N200C AA11 Increases efficiency KK AA22 Eliminates need for snubber circuits Reduces EMI filter component size and count RoHS Compliant Enables extremely fast switching Package uses Lead-free plating and Green mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage T = 25 C 200 V RRM J I Average forward current Per Diode, T = 150 C, T = 130 C 5 A F(AVG) J C Per Device, T = 150 C, T = 130 C 10 A J C I Non-repetitive peak surge current Per Diode, 60 Hz, cycle 60 A FSM Per Diode, cycle of t = 28 s I Non-repetitive peak surge current 350 A FSM Sinusoid, T = 25 C C T Operating junction temperature range 55 to 150 C J T Storage temperature 55 to 150 C STG Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 C P Power dissipation T = 25 C 27.7 W D C Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220AB (only) 62 C/W JA Per Diode 4.5 C/W Junction to case R JC Per Device 2.3 C/W www.powerint.com January 2015 LQA10T200C, LQA10N200C Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics per diode I Reverse current per diode V = 200 V, T = 25 C - - 250 R R J A V = 200 V, T = 125 C - 0.23 - mA R J V Forward voltage per diode I = 5 A, T = 25 C - 0.95 1.1 V F F J I = 5 A, T = 150 C - 0.8 - V F J C Junction capacitance per V = 10 V, 1 MHz - 22 - pF J R diode Dynamic Characteristics per diode tRR Reverse recovery time, dI /dt = 200 A/s TJ = 25 C - 13.9 - ns F per diode V = 130 V, R T = 125 C - 19.5 - ns J I = 5 A F Q Reverse recovery charge, dI /dt = 200 A/s T = 25 C - 15.6 25.5 nC RR F J per diode V = 130 V, R T = 125 C - 32.4 - nC J I = 5 A F I Maximum reverse T = 25 C - 1.78 2.65 A RRM dI /dt = 200 A/s J F recovery current, per V = 130 V, R T = 125 C - 2.6 - A J diode I = 5 A F S T = 25 C - 0.44 - dI /dt = 200 A/s J t F b Softness per diode = V = 130 V, R T = 125 C - 0.39 - J t a I = 5 A F Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR D1 L1 DUT I t F RR 15V Pulse generator dI /dt + F Rg t t a b Q1 0 0.1xIRRM I RRM Figure 2. Reverse Recovery Test Circuit Figure 1. Reverse Recovery Definitions 2 www.power.com Rev. 1.0 01/15