LQA06T300 Qspeed Family 300 V, 6 A Q-Series Diode Product Summary General Description I 6 A This device has the lowest Q of any 300 V F(AVG) RR Silicon diode. Its recovery characteristics V 300 V RRM increase efficiency, reduce EMI and eliminate Q (Typ at 125 C) 27 nC RR snubbers. I (Typ at 125 C) 1.87 A RRM Softness t /t (Typ at 125 C) 0.7 b a Applications AC/DC and DC/DC output rectification Output & freewheeling diodes Pin Assignment Motor control drive circuits Uninterruptible Power Supply (UPS) inverters Features Low Q , Low I , Low t RR RRM RR High dI /dt capable (1000A/s) F Soft recovery Benefits AC Increases efficiency TO-220AC Eliminates need for snubber circuits Reduces EMI filter component size & count RoHS Compliant Enables extremely fast switching Package uses Lead-free plating and Green mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage 300 V RRM I Average forward current T = 150 C, T = 117C 6 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle 37 A FSM I Non-repetitive peak surge current cycle of T = 28 us Sinusoid, T = 25 C 350 A FSM C T Maximum junction temperature 150 C J T Storage temperature 55 to 150 C STG Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 C P Power dissipation T = 25 C 33.8 W D C V Peak repetitive reverse voltage 300 V RRM Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 62 C/W JA Junction to case TO-220 3.7 C/W R JC www.powerint.com January 2011 LQA06T300 Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics I Reverse current V = 300 V, T = 25 C - - 25 R R J A V = 300 V, T = 125 C - 0.24 - mA R J V Forward voltage I = 6 A, T = 25 C - 1.6 1.9 V F F J I = 6 A, T = 150 C - 1.34 - V F J C Junction capacitance V = 10 V, 1 MHz - 19 - pF J R Dynamic Characteristics t TReverse recovery time, =25 C - 11.5 - ns RR dI /dt =200A/s J F V =200V, I =6A R F T =125 C - 21 - ns J Q TReverse recovery charge, dI /dt =200A/s =25 C - 8.5 13 nC RR F J V =200V, I =6A R F T=125 C - 27 - nC J I TMaximum reverse =25 C - 1.15 1.6 A RRM dI /dt =200A/s J F recovery current, V =200V, I =6A R F T =125 C - 1.87 - A J S T =25 C - 0.7 - dI /dt =200A/s J t F b Softness = V =200V, I =6A R F T =125 C - 0.7 - J t a Note to component engineers: Q-series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR D1 L1 DUT I t F RR 15V Pulse generator dI /dt + F Rg t t a b Q1 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit Figure 1. Reverse Recovery Definitions 2 www.powerint.com Rev 1.2 01/11