VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 125 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base cathode AEC-Q101 qualified 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 1 3 1 3 State of the art hyperfast recovery rectifiers designed with N/C Anode N/C Anode optimized performance of forward voltage drop, hyperfast VS-30ETH06SPbF VS-30ETH06-1PbF recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness PRODUCT SUMMARY and reliability characteristics. 2 These devices are intended for use in PFC boost stage in the Package TO-263AB (D PAK), TO-262AA AC/DC section of SMPS, inverters or as freewheeling I 30 A F(AV) diodes. V 600 V R Their extremely optimized stored charge and low recovery V at I 1.34 V current minimize the switching losses and reduce over F F dissipation in the switching element and snubbers. t typ. 28 ns rr T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 103 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.6 F Forward voltage V F I = 30 A, T = 150 C - 1.34 1.75 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 60 500 J R R Junction capacitance C V = 600 V - 33 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 09-Jul-15 Document Number: 94020 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 28 35 F F R Reverse recovery time t T = 25 C -31- ns rr J T = 125 C - 77 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 200 V R T = 25 C - 65 - J Reverse recovery charge Q nC rr T = 125 C - 345 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.71.1 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.2 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) 30ETH06S Marking device Case style TO-262AA 30ETH06-1 Revision: 09-Jul-15 Document Number: 94020 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000