RB095B-40TL ROHM

Data Sheet Schottky barrier diode RB095B-40 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 General rectification (Common cathode dual chip) Features 1.6 1.6 1)Power mold type.(CPD3) 2)Low V F 3)High reliability CPD 2.3 2.3 Construction Structure (2) Silicon epitaxial planar (1) (3) Taping dimensions(Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 45 V RM Reverse voltage (DC) V 40 V R Average rectified forward current(*1) 6 Io A Forward current surge peak (60Hz1cyc)(*1) 45 I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120 C Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.55 V I =3.0A F F Reverse current I - - 100 A V =40V R R Thermal impedance jc - - 6.0 C/W junction to case www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.F 1/3 3.0 2.0 6.0RB095B-40 Data Sheet Electrical characteristic curves 10 1000 1000000 Ta=150C Ta=125C f=1MHz Ta=150 C 100000 Ta=-25 C 10000 1 Ta=125 100 Ta=75 C 1000 Ta=25 C 100 Ta=75 C Ta=25 C 10 0.1 10 1 Ta=-25 C 0.1 1 0.01 0.01 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R FORWARD VOLTAGE : V (mV) R F V -Ct CHARACTERISTICS R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 500 200 650 Ta=25 C Ta=25 C Ta=25 C 640 I =3A F V =40V f=1MHz R 490 n=30pcs 630 n=30pcs V =0V R 150 620 n=10pcs 480 610 AVE:617.9pF 100 600 470 590 580 50 AVE:472.9mV 460 570 AVE:14.2 A 560 450 0 550 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 30 1000 Ta=25 C I =0.5A F 250 25 Ifsm 1cyc Ifsm I =1A R Irr=0.25*I R 200 20 8.3ms 8.3ms 8.3ms n=10pcs 1cyc 150 15 100 100 10 AVE:11.40ns 50 5 AVE:76.0A 10 0 0 1 10 100 I DISPERSION MAP trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 100 10 1000 Rth(j-a) Ifsm t Rth(j-c) 10 D=1/2 DC 5 100 Sin( =180) Mounted on epoxy board IM=100mA 1 I =1A F 1ms time 300 s 0.1 0 10 0.001 0.01 0.1 1 10 100 1000 0 2468 10 110 100 AVERAGE RECTIFIED TIME : t(ms) TIME : t(s) FORWARD CURRENT : Io(A) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM REVERSE CURRENT : I (A) R TRANSIENT REVERSE RECOVERY TIME : trr(ns) REVERSE CURRENT : I (A) R THAERMAL IMPEDANCE : Rth (C/W) CAPACITANCE PEAK SURGE CAPACITANCE FORWARD POWER BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I (A) BETWEEN TERMINALS : Ct(pF) FSM DISSIPATION : Pf(W)