333 3 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Available Junction passivation optimized design passivated anisotropic rectifier technology T = 185 C capability suitable for high J reliability and automotive requirement Available in uni-directional polarity only 3000 W peak pulse power capability with a Available SMC (DO-214AB) 10/1000 s waveform Excellent clamping capability Cathode Anode Very fast response time Low incremental surge resistance LINKS TO ADDITIONAL RESOURCES Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 3D Models AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 10 V to 43 V WM TYPICAL APPLICATIONS V 11.1 V to 52.8 V BR P 3000 W PPM Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightin g P 6.0 W D on ICs, MOSFET, signal lines of sensor units for consumer, I 200 A FSM computer, industrial, automotive, and telecommunication. T max. 185 C J Polarity Unidirectional MECHANICAL DATA Package SMC (DO-214AB) Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3 X - halogen-free, RoHS-compliant and AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig. 3) P 3000 W PPM (1) Peak power pulse current with a 10/1000 s waveform (fig. 1) I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM Power dissipation on infinite heatsink, T = 75 C (fig. 6) P 6.0 W L D (2) Maximum instantaneous forward voltage at 100 A V 3.5 V F Operating junction and storage temperature range T , T -65 to +185 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 19-Apr-2021 Document Number: 88480 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM TYPICAL MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF REVERSE PEAK TEMP. DEVICE REVERSE CLAMPING (1) DEVICE TYPE V AT I CURRENT VOLTAGE LEAKAGE PULSE COEFFICIENT BR T MARKING LEAKAGE VOLTAGE (3) (V) I V AT V SURGE OF V T WM WM BR CODE AT V AT I WM PPM (mA) (V) I (A) CURRENT T D I (A) V (V) R C MIN. NOM. MAX. (2) T = 150 C I (A) (%/C) J PPM 3KASMC10A 3AX 11.1 11.7 12.3 1.0 10 5.0 50 177 17.0 0.069 3KASMC11A 3AZ 12.2 12.9 13.5 1.0 11 5.0 50 165 18.2 0.072 3KASMC12A 3BE 13.3 14.0 14.7 1.0 12 2.0 20 151 19.9 0.074 3KASMC13A 3BG 14.4 15.2 15.9 1.0 13 2.0 20 140 21.5 0.076 3KASMC14A 3BK 15.6 16.4 17.2 1.0 14 1.0 10 129 23.2 0.078 3KASMC15A 3BM 16.7 17.6 18.5 1.0 15 1.0 10 123 24.4 0.080 3KASMC16A 3BP 17.8 18.8 19.7 1.0 16 1.0 10 115 26.0 0.081 3KASMC17A 3BR 18.9 19.9 20.9 1.0 17 1.0 10 109 27.6 0.082 3KASMC18A 3BT 20.0 21.1 22.1 1.0 18 1.0 10 103 29.2 0.083 3KASMC20A 3BV 22.2 23.4 24.5 1.0 20 1.0 10 92.6 32.4 0.085 3KASMC22A 3BX 24.4 25.7 26.9 1.0 22 1.0 10 84.5 35.5 0.086 3KASMC24A 3BZ 26.7 28.1 29.5 1.0 24 1.0 10 77.1 38.9 0.087 3KASMC26A 3CE 28.9 30.4 31.9 1.0 26 1.0 10 71.3 42.1 0.088 3KASMC28A 3CG 31.1 32.8 34.4 1.0 28 1.0 10 66.1 45.4 0.089 3KASMC30A 3CK 33.3 35.1 36.8 1.0 30 1.0 15 62.0 48.4 0.090 3KASMC33A 3CM 36.7 38.7 40.6 1.0 33 1.0 15 56.3 53.3 0.091 3KASMC36A 3CP 40.0 42.1 44.2 1.0 36 1.0 20 51.6 58.1 0.091 3KASMC40A 3CR 44.4 46.8 49.1 1.0 40 1.0 20 46.5 64.5 0.092 3KASMC43A 3CT 47.8 50.3 52.8 1.0 43 1.0 20 43.2 69.4 0.093 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J (4) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to ambient air R 77.5 JA C/ W Typical thermal resistance, junction to leads R 18.3 JL Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) 3KASMC10AHE3 B/H 0.211 H 850 7 diameter plastic tape and reel (1) 3KASMC10AHE3 B/I 0.211 I 3500 13 diameter plastic tape and reel (1) 3KASMC10AHM3 B/H 0.211 H 850 7 diameter plastic tape and reel (1) 3KASMC10AHM3 B/I 0.211 I 3500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Apr-2021 Document Number: 88480 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000