TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3222 TVS RoHS Pb GREEN SP3222 0.9pF 30kV dual channel TVS Description The SP3222 integrates 2 channels of low capacitance diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (30kV contact discharge) without performance degradation. The low loading capacitance makes it ideal for protecting high speed data lines such as DVI, USB2.0, USB3.0 and eSATA. Pinout Features ESD protection of 30kV Space efficient 0402 SOD883 contact discharge, (SOD883) footprint 30kV air discharge, (IEC Extremely low dynamic 61000-4-2) resistance (0.17 TYP) 1 2 EFT, IEC 61000-4-4, 40A Moisture Sensitivity (5/50ns) Level(MSL -1) Lightning protection, IEC Halogen free, Lead free nd 61000-4-5 2 edition, 3A and RoHS compliant (t =8/20s) p AEC-Q101 qualified Low capacitance of 0.9pF 3 V =0V (MAX) R Bottom View Functional Block Diagram Applications USB 3.0/USB 2.0/MHL External Storage 1 2 MIPI Camera and Display Ultrabooks, Notebooks DisplayPort 1.3, eSATA Tablets, eReaders Set Top Boxes, Game High Speed Serial Consoles Interfaces Smart Phones Applications Example D+ 3 USB2.0 D- Life Support Note: Not Intended for Use in Life Support or Life Saving Applications SP3222-02ETG The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/20 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3222 TVS Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 30 W PK P I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature -40 to 125 C OP CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 3.3 V RWM Forward Bias -0.9 -0.7 V Breakdown Voltage V I =1mA 6.1 8.0 9.0 V BR R Reverse Leakage Current I V =3.3V 0.01 0.1 A LEAK R 1 Clamp Voltage V I =3A, t =8/20s, Fwd 10 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.17 DYN p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V 0.9 pF D Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 200ps rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Clamping Voltage vs I PP 12.0 110% 100% 10.0 90% 8.0 80% 70% 6.0 60% 50% 4.0 40% 30% 2.0 20% 10% 0.0 0% 1.0 1.5 2.0 2.5 3.0 0.05.0 10.015.020.025.030.0 Time (s) Peak Pulse Current -I (A) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/20 Percent of I PP Clamp Voltage (V ) C