X-On Electronics has gained recognition as a prominent supplier of 3KASMC43HE3/57T ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. 3KASMC43HE3/57T ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

3KASMC43HE3/57T Vishay

3KASMC43HE3/57T electronic component of Vishay
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Part No.3KASMC43HE3/57T
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors 3000W 43V 10% Unidir
Datasheet: 3KASMC43HE3/57T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
850: USD 0.6113 ea
Line Total: USD 519.6 
Availability - 0
MOQ: 850  Multiples: 850
Pack Size: 850
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 850
Multiples : 850
850 : USD 0.6113
1700 : USD 0.5985

   
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We are delighted to provide the 3KASMC43HE3/57T from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3KASMC43HE3/57T and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 185 C capability suitable for high J reliability and automotive requirement Available in uni-directional polarity only 3000 W peak pulse power capability with a 10/1000 s waveform Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of DO-214AB (SMC) 260 C AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, PRIMARY CHARACTERISTICS computer, industrial, automotive, and telecommunication. V 10 V to 43 V WM V 11.1 V to 52.8 V BR MECHANICAL DATA P 3000 W PPM Case: DO-214AB (SMC) P 6.0 W D Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified I 200 A FSM Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified T max. 185 C J ( X denotes revision code e.g. A, B, .....) Polarity Uni-directional Terminals: Matte tin plated leads, solderable per Package DO-214AB (SMC) J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig. 3) P 3000 W PPM (1) Peak power pulse current with a 10/1000 s waveform (fig. 1) I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM Power dissipation on infinite heatsink, T = 75 C (fig. 6) P 6.0 W L D (2) Maximum instantaneous forward voltage at 100 A V 3.5 V F Operating junction and storage temperature range T , T -65 to +185 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 25-Nov-13 Document Number: 88480 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910003KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF REVERSE DEVICE REVERSE PEAK PULSE CLAMPING (1) DEVICE TYPE V AT I CURRENT VOLTAGE LEAKAGE BR T MARKING LEAKAGE SURGE VOLTAGE AT (V) I V AT V T WM WM CODE AT V CURRENT I WM PPM (mA) (V) I (A) D (2) I (A) I (A) V (V) MIN. MAX. R PPM C T = 150 C J 3KASMC10 3AW 11.1 13.6 1.0 10 5.0 50 160 18.8 3KASMC10A 3AX 11.1 12.3 1.0 10 5.0 50 177 17.0 3KASMC11 3AY 12.2 14.9 1.0 11 5.0 50 149 20.1 3KASMC11A 3AZ 12.2 13.5 1.0 11 5.0 50 165 18.2 3KASMC12 3BD 13.3 16.3 1.0 12 2.0 20 136 22.0 3KASMC12A 3BE 13.3 14.7 1.0 12 2.0 20 151 19.9 3KASMC13 3BF 14.4 17.6 1.0 13 2.0 20 126 23.8 3KASMC13A 3BG 14.4 15.9 1.0 13 2.0 20 140 21.5 3KASMC14 3BH 15.6 19.1 1.0 14 1.0 10 116 25.8 3KASMC14A 3BK 15.6 17.2 1.0 14 1.0 10 129 23.2 3KASMC15 3BL 16.7 20.4 1.0 15 1.0 10 112 26.9 3KASMC15A 3BM 16.7 18.5 1.0 15 1.0 10 123 24.4 3KASMC16 3BN 17.8 21.8 1.0 16 1.0 10 104 28.8 3KASMC16A 3BP 17.8 19.7 1.0 16 1.0 10 115 26.0 3KASMC17 3BQ 18.9 23.1 1.0 17 1.0 10 98.4 30.5 3KASMC17A 3BR 18.9 20.9 1.0 17 1.0 10 109 27.6 3KASMC18 3BS 20.0 24.4 1.0 18 1.0 10 93.2 32.2 3KASMC18A 3BT 20.0 22.1 1.0 18 1.0 10 103 29.2 3KASMC20 3BU 22.2 27.1 1.0 20 1.0 10 83.8 35.8 3KASMC20A 3BV 22.2 24.5 1.0 20 1.0 10 92.6 32.4 3KASMC22 3BW 24.4 29.8 1.0 22 1.0 10 76.1 39.4 3KASMC22A 3BX 24.4 26.9 1.0 22 1.0 10 84.5 35.5 3KASMC24 3BY 26.7 32.6 1.0 24 1.0 10 69.8 43.0 3KASMC24A 3BZ 26.7 29.5 1.0 24 1.0 10 77.1 38.9 3KASMC26 3CD 28.9 35.3 1.0 26 1.0 10 64.4 46.6 3KASMC26A 3CE 28.9 31.9 1.0 26 1.0 10 71.3 42.1 3KASMC28 3CF 31.1 38.0 1.0 28 1.0 10 60.0 50.0 3KASMC28A 3CG 31.1 34.4 1.0 28 1.0 10 66.1 45.4 3KASMC30 3CH 33.3 40.7 1.0 30 1.0 15 56.1 53.5 3KASMC30A 3CK 33.3 36.8 1.0 30 1.0 15 62.0 48.4 3KASMC33 3CL 36.7 44.9 1.0 33 1.0 15 50.8 59.0 3KASMC33A 3CM 36.7 40.6 1.0 33 1.0 15 56.3 53.3 3KASMC36 3CN 40.0 48.9 1.0 36 1.0 20 46.7 64.3 3KASMC36A 3CP 40.0 44.2 1.0 36 1.0 20 51.6 58.1 3KASMC40 3CQ 44.4 54.3 1.0 40 1.0 20 42.0 71.4 3KASMC40A 3CR 44.4 49.1 1.0 40 1.0 20 46.5 64.5 3KASMC43 3CS 47.8 58.4 1.0 43 1.0 20 39.1 76.7 3KASMC43A 3CT 47.8 52.8 1.0 43 1.0 20 43.2 69.4 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Revision: 25-Nov-13 Document Number: 88480 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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