X-On Electronics has gained recognition as a prominent supplier of 4N32-X007T Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. 4N32-X007T Transistor Output Optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

4N32-X007T Vishay

4N32-X007T electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.4N32-X007T
Manufacturer: Vishay
Category: Transistor Output Optocouplers
Description: Vishay Semiconductors Transistor Output Optocouplers Phototransistor Out Single CTR>500%
Datasheet: 4N32-X007T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.2927
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7415
10 : USD 0.4789
100 : USD 0.3638
500 : USD 0.2751
1000 : USD 0.2481
2000 : USD 0.2473
5000 : USD 0.2473
10000 : USD 0.2473
25000 : USD 0.2473
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 4N32-X007T from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 4N32-X007T and other electronic components in the Transistor Output Optocouplers category and beyond.

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4N32, 4N33 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES 6 A 1 B Very high current transfer ratio, 500 % min. 11 High isolation resistance, 10 typical C 2 5 C Standard plastic DIP package NC 3 4 E Material categorization: i179005 1 for definitions of compliance please see V DE www.vishay.com/doc 99912 i179005 AGENCY APPROVALS UL1577, file no. E52744 system code H DESCRIPTION DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5 (pending), available with option 1 The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington BSI IEC 60950 IEC 60065 sensor. FIMKO Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION DIP 4 N 3 - X 0 T PART NUMBER PACKAGE OPTION TAPE AND REEL 7.62 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO 500 500 DIP-6 4N32 4N33 Note Additional options may be possible, please contact sales office Rev. 1.3, 30-Nov-17 Document Number: 81865 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 4N32, 4N33 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT input Reverse voltage V 3V R Forward current I 60 mA F Power dissipation P 100 mW diss Derate linearly From 55 C 1.33 mW/C output Collector emitter breakdown voltage BV 30 V CEO Emitter base breakdown voltage BV 8V EBO Collector base breakdown voltage BV 50 V CBO Emitter collector breakdown voltage BV 5V ECO Collector (load) current I 100 mA C Power dissipation P 150 mW diss Derate linearly 2mW/C coupler Total dissipation P 250 mW tot Derate linearly 3.3 mW/C Isolation test voltage (between emitter 1 s V 5300 V ISO RMS Leakage path 7mm min. Air path 7mm min. 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T -55 to +150 C stg Operating temperature T -55 to +100 C amb (1) Lead soldering time At 260 C 10 s Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT input Forward voltage I = 50 mA V - 1.25 1.5 V F F Reverse current V = 3 V I - 0.1 100 A R R Capacitance V = 0 V C -25 pF R O output (1) Collector emitter breakdown voltage I = 100 A, I = 0 BV 30 - - V C F CEO (1) Collector base breakdown voltage I = 100 A, I = 0 BV 50 - - V C F CBO (1) Emitter base breakdown voltage I = 100 A, I = 0 BV 8- - V C F EBO (1) Emitter collector breakdown voltage I = 100 A, I = 0 BV 510 - V C F ECO Collector emitter leakage current V = 10 V, I = 0 I - 1 100 nA CE F CEO I = 0.5 mA, V = 5 V h 13 - - C CE FE coupler Collector emitter saturation voltage V -1 - V CEsat Coupling capacitance - 1.5 - pF Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Indicates JEDEC registered values Rev. 1.3, 30-Nov-17 Document Number: 81865 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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