VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Available 175 C operating junction temperature Output rectification TO-247AC modified TO-247AC Designed and qualified according to JEDEC -JESD 47 Base Base common Material categorization: common cathode Available for definitions of compliance please see cathode 2 2 www.vishay.com/doc 99912 BENEFITS Reduced RFI and EMI Higher frequency operation 1 3 Anode Anode Cathode Anode 1 3 Reduced snubbing VS-60EPU02PbF VS-60APU02PbF Reduced parts count VS-60EPU02-N3 VS-60APU02-N3 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY These diodes are optimized to reduce losses and EMI/RFI in TO-247AC modified (2 pins), high frequency power conditioning systems. Package TO-247AC The softness of the recovery eliminates the need for a I 60 A F(AV) snubber in most applications. These devices are ideally V 200 V R suited for HF welding, power converters and other V at I 0.81 V applications where switching losses are not significant F F t typ. See Recovery table portion of the total losses. rr T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 200 V R Continuous forward current I T = 127 C 60 F(AV) C Single pulse forward current I T = 25 C 800 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 120 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 60 A - 0.98 1.08 F Forward voltage V F I = 60 A, T = 175 C - 0.81 0.88 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 200 V - 87 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 17-Oct-16 Document Number: 94021 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -28 - ns rr J T = 125 C - 50 - J I = 60 A F T = 25 C - 4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 8 - J V = 160 V R T = 25 C - 59 - J Reverse recovery charge Q nC rr T = 125 C - 220 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.70 thJC junction to case K/W Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -5.5 - g Weight -0.2 - oz. Mounting torque -- 1.2 N m Case style TO-247AC modified 60EPU02 Marking device Case style TO-247AC 60APU02 Revision: 17-Oct-16 Document Number: 94021 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000