VS-8ETH06SPbF, VS-8ETH06-1PbF
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
FEATURES
Hyperfast recovery time
Low forward voltage drop
Low leakage current
175 C operating junction temperature
2
TO-263AB (D PAK) TO-262AA
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 C
Base
AEC-Q101 qualified
cathode
2
2 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
3
1 3 1
optimized performance of forward voltage drop, hyperfast
N/C Anode N/C Anode
recovery time, and soft recovery.
VS-8ETH06SPbFVS-8ETH06-1PbF
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
These devices are intended for use in PFC boost stage in
2
Package TO-263AB (D PAK), TO-262AA
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
I 8 A
F(AV)
Their extremely optimized stored charge and low recovery
V 600 V
R
current minimize the switching losses and reduce over
V at I 1.3 V
F F
dissipation in the switching element and snubbers.
t typ. 18 ns
rr
T max. 175 C
J
Diode variation Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS
Peak repetitive reverse voltage V 600 V
RRM
Average rectified forward current I T = 144 C 8
F(AV) C
Non-repetitive peak surge current I T = 25 C 90 A
FSM J
Peak repetitive forward current I 16
FM
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, V ,
BR
I = 100 A 600 - -
R
blocking voltage V
R
V
I = 8 A - 2.0 2.4
F
Forward voltage V
F
I = 8 A, T = 150 C - 1.3 1.8
F J
V = V rated - 0.3 50
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - 55 500
J R R
Junction capacitance C V = 600 V - 17 - pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
Revision: 10-Jul-15 Document Number: 94027
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-8ETH06SPbF, VS-8ETH06-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
C
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1 A, dI /dt = 100 A/s, V = 30 V - 18 22
F F R
I = 8 A, dI /dt = 100 A/s, V = 30 V - 20 25
F F R
Reverse recovery time t ns
rr
T = 25 C -25 -
J
= 125 C - 40 -
T
J
I = 8 A
F
T = 25 C - 2.4 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 4.8 -
J
V = 390 V
R
T = 25 C - 25 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 120 -
J
Reverse recovery time t -33 - ns
rr
I = 8 A
F
Peak recovery current I T = 125 C dI /dt = 600 A/s -12 - A
RRM J F
V = 390 V
R
Reverse recovery charge Q - 220 - nC
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -65 - 175 C
J Stg
temperature range
Thermal resistance,
R -1.42
thJC
junction to case per leg
Thermal resistance,
R Typical socket mount - - 70 C/W
thJA
junction to ambient per leg
Thermal resistance, Mounting surface, flat, smooth
R -0.5 -
thCS
case to heatsink and greased
-2.0 - g
Weight
-0.07 - oz.
12 kgf cm
Mounting torque 6.0 (5.0) -
(10) (lbf in)
2
PAK) 8ETH06S
Case style TO-263AB (D
Marking device
Case style TO-262AA 8ETH06-1
Revision: 10-Jul-15 Document Number: 94027
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000