VS-8TQ080SPbF, VS-8TQ100SPbF
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
175 C T operation
J
Base
Low forward voltage drop
cathode
High frequency operation
2
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
1 3
term reliability
2
D PAK N/C Anode
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
PRODUCT SUMMARY
DESCRIPTION
I 8 A
F(AV)
The VS-8TQ... Schottky rectifier series has been optimized
V 80 V/100 V
R
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 8 A
F(AV)
V Range 80/100 V
RRM
I t = 5 s sine 850 A
FSM p
V 8 Apk, T = 125 C 0.58 V
F J
T Range - 55 to 175 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-8TQ080SPbFVS-8TQ100SPbFUNITS
Maximum DC reverse voltage V
R
80 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
I 50 % duty cycle at T = 157 C, rectangular waveform 8 A
F(AV) C
See fig. 5
Maximum peak one cycle Following any rated load
5 s sine or 3 s rect. pulse 850
non-repetitive surge current I condition and with rated A
FSM
10 ms sine or 6 ms rect. pulse 230
See fig. 7 V applied
RRM
Non-repetitive avalanche energy E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 0.50 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Document Number: 94266 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 15-Mar-10 1
VS-8TQ080SPbF, VS-8TQ100SPbF
Schottky Rectifier, 8 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
8 A 0.72
T = 25 C
J
16 A 0.88
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
8 A 0.58
T = 125 C
J
16 A 0.69
T = 25 C 0.55
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 7
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 500 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and
T , T - 55 to 175 C
J Stg
storage temperature range
Maximum thermal resistance, DC operation
R 2.0
thJC
junction to case See fig. 4
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
8TQ080S
2
Marking device Case style D PAK
8TQ100S
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94266
2 Revision: 15-Mar-10