VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Material categorization: 2 for definitions of compliance please see 3 www.vishay.com/doc 99912 1 13 TO-252AA (D-PAK) -- Anode Anode APPLICATIONS Output rectification and freewheeling diode in inverters, choppers and converters PRODUCT SUMMARY Input rectifications where severe restrictions on Package TO-252AA (D-PAK) conducted EMI should be met I 8 A F(AV) V 1000 V, 1200 V R DESCRIPTION V at I 1.3 V F F The VS-8EWF..S-M3 fast soft recovery rectifier series has I 150 A FSM been optimized for combined short reverse recovery time, t 80 ns rr low forward voltage drop and low leakage current. T max. 150 C J The glass passivation ensures stable reliable operation in Diode variation Single die the most severe temperature and power cycling conditions. Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 8 A F(AV) V 1000/1200 V RRM I 150 A FSM V 8 A, T = 25 C 1.3 V F J t 1 A, 100 A/s 80 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-8EWF10S-M3 1000 1100 4 VS-8EWF12S-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 96 C, 180 conduction half sine wave 8 F(AV) C Maximum peak one cycle 10 ms sine pulse, rated V applied 125 A RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated V applied 78 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 110 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A s Revision: 16-Jan-17 Document Number: 93377 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 8 A, T = 25 C 1.3 V FM J Forward slope resistance r 25.6 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t 270 ns I rr FM I at 8 A F pk t rr Reverse recovery current I 25 A/s 4.2 A rr t t a b t T = 25 C J di Reverse recovery charge Q 1C rr dt Q rr Snap factor S 0.6 I rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and T , T -40 to +150 C J Stg storage temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Typical thermal resistance, (1) R 50 thJA junction to ambient (PCB mount) 1g Approximate weight 0.03 oz. 8EWF10S Marking device Case style TO-252AA (D-PAK) 8EWF12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 16-Jan-17 Document Number: 93377 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000