333 3 AU1FK, AU1FM www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Avalanche Rectifiers FEATURES Available eSMP Series Low profile package Ideal for automated placement Glass passivated pellet chip junction Ultrafast recovery times for high frequency Low reverse current Meets MSL level 1, per J-STD-020 Top view Bottom view LF maximum peak of 260 C SMF (DO-219AB) Wave and reflow solderable AEC-Q101 qualified Cathode Anode - Automotive ordering code: base P/NHM3 LINKS TO ADDITIONAL RESOURCES Compatible to SOD-123W package case outline Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, PRIMARY CHARACTERISTICS inverters, converters, and freewheeling diodes for I 1.0 A F(AV) consumer, automotive, and telecommunication. V 800 V, 1000 V RRM I 25 A FSM MECHANICAL DATA t 75 ns rr Case: SMF (DO-219AB) I 1 A R Molding compound meets UL 94 V-0 flammability rating V at I = 1 A 1.6 V F F Base P/N-M3 - halogen-free, RoHS-compliant E 20 mJ AS Base P/NHM3 - halogen-free, RoHS-compliant and T max. 175 C AEC-Q101 qualified J Package SMF (DO-219AB) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL AU1FK AU1FM UNIT Device marking code AUK AUM Max. repetitive peak reverse voltage V 800 1000 V RRM (1) Max. DC forward current (see fig. 1) I 1.0 A F Peak forward surge current 10 ms single half sine-wave I 25 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 1.0 A, T = 25 C E 20 mJ AS A AS Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Free air, mounted on recommended PCB, 2 oz. pad area Revision: 17-Sep-2020 Document Number: 87168 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DAU1FK, AU1FM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER TEST CONDITIONS SYMBOL AU1FK AU1FM UNIT T = 25 C 1.85 J (1) Maximum instantaneous forward voltage I = 1.0 A V V F F T = 125 C 1.6 J T = 25 C 1.0 J (2) Maximum reverse current Rated V I A R R T = 125 C 100 J Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 75 ns F R rr rr Typical junction capacitance 4.0 V, 1 MHz C 8.2 pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL AU1FK AU1FM UNIT (1)(2) R 130 JA Typical thermal resistance C/W (1) R 20 JM Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient R - junction to mount JA JM (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE AU1FM-M3/H 0.0145 H 3000 7 diameter plastic tape and reel AU1FM-M3/I 0.0145 I 10 000 13 diameter plastic tape and reel (1) AU1FMHM3/H 0.0145 H 3000 7 diameter plastic tape and reel (1) AU1FMHM3/I 0.0145 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 17-Sep-2020 Document Number: 87168 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000