X-On Electronics has gained recognition as a prominent supplier of BAS16-HE3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS16-HE3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS16-HE3-08 Vishay

Hot BAS16-HE3-08 electronic component of Vishay
BAS16-HE3-08 Vishay
BAS16-HE3-08 Diodes - General Purpose, Power, Switching
BAS16-HE3-08  Semiconductors

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Part No. BAS16-HE3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 75 Volt 0.15 Amp 2.0A IFSM 1uS
Datasheet: BAS16-HE3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1040: USD 0.0605 ea
Line Total: USD 62.92 
Availability - 5602
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 1040  Multiples: 1
Pack Size: 1
Availability Price Quantity
11615
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.1838
10 : USD 0.1004
100 : USD 0.0702
500 : USD 0.0467
1000 : USD 0.034
3000 : USD 0.0287
6000 : USD 0.0266
9000 : USD 0.0234
15000 : USD 0.0213

5602
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1040
Multiples : 1
1040 : USD 0.0605
1453 : USD 0.0432
1931 : USD 0.0326
3000 : USD 0.0267
6000 : USD 0.0238
9000 : USD 0.0209

   
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We are delighted to provide the BAS16-HE3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS16-HE3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS16 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode 3 Ultra fast switching speed Surface mount package ideally suited for automatic insertion High conductance 12 AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 V RM Repetitive peak reverse voltage = working peak reverse voltage V = V = V 75 V RRM RWM R = DC blocking voltage t = 1 s I 1A p FSM Peak forward surge current t = 1 s I 2A p FSM Half wave rectification with resistive load and Average forward current f 50 MHz, on ceramic substrate I 150 mA F(AV) 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 300 mA F 8 mm x 10 mm x 0.7 mm On ceramic substrate Power dissipation P 350 mW tot 8 mm x 10 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 357 K/W thJA 8 mm x 10 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 1.9, 11-Jul-17 Document Number: 85539 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 855 mV F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 75 V I 1000 nA R R Reverse current V = 75 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0, f = 1 MHz C 4pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 V =20V R 100 1000 T = 100 C j 10 25 C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 14356 V Forward Voltage (V) - 14357 T Junction Temperature (C) F j Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 1.9, 11-Jul-17 Document Number: 85539 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I Reverse Current (nA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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