X-On Electronics has gained recognition as a prominent supplier of BAS16-HE3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS16-HE3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS16-HE3-08 Vishay

BAS16-HE3-08 electronic component of Vishay
BAS16-HE3-08 Vishay
BAS16-HE3-08 Diodes - General Purpose, Power, Switching
BAS16-HE3-08  Semiconductors

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Part No. BAS16-HE3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 75 Volt 0.15 Amp 2.0A IFSM 1uS
Datasheet: BAS16-HE3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.19 ea
Line Total: USD 0.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 306
Multiples : 1
306 : USD 0.2123
1562 : USD 0.0416

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.2611
10 : USD 0.0295

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0234
12000 : USD 0.0225
45000 : USD 0.0225
75000 : USD 0.0225
150000 : USD 0.0225

0
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.19
10 : USD 0.1038
100 : USD 0.0725
500 : USD 0.0483
1000 : USD 0.0352
3000 : USD 0.0297
6000 : USD 0.0275
9000 : USD 0.0242
15000 : USD 0.022

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1025
Multiples : 1
1025 : USD 0.0634
1433 : USD 0.0454
1901 : USD 0.0342
3000 : USD 0.0278
6000 : USD 0.0249
9000 : USD 0.023

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 315
Multiples : 1
315 : USD 0.0866
1000 : USD 0.0592
3000 : USD 0.0444
9000 : USD 0.0374
24000 : USD 0.0324
45000 : USD 0.0295
99000 : USD 0.0263

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 9000
Multiples : 3000
9000 : USD 0.0399
24000 : USD 0.0363
45000 : USD 0.0316
99000 : USD 0.0272

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 6000
Multiples : 6000
6000 : USD 0.0269

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 309
Multiples : 1
309 : USD 0.0897
1000 : USD 0.0615
3000 : USD 0.0459
9000 : USD 0.0387
24000 : USD 0.0338
45000 : USD 0.0306
99000 : USD 0.027

   
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We are delighted to provide the BAS16-HE3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS16-HE3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS16 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode 3 Ultra fast switching speed Surface mount package ideally suited for automatic insertion High conductance 12 AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 V RM Repetitive peak reverse voltage = working peak reverse voltage V = V = V 75 V RRM RWM R = DC blocking voltage t = 1 s I 1A p FSM Peak forward surge current t = 1 s I 2A p FSM Half wave rectification with resistive load and Average forward current f 50 MHz, on ceramic substrate I 150 mA F(AV) 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 300 mA F 8 mm x 10 mm x 0.7 mm On ceramic substrate Power dissipation P 350 mW tot 8 mm x 10 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 357 K/W thJA 8 mm x 10 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 1.9, 11-Jul-17 Document Number: 85539 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 855 mV F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 75 V I 1000 nA R R Reverse current V = 75 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0, f = 1 MHz C 4pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 V =20V R 100 1000 T = 100 C j 10 25 C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 14356 V Forward Voltage (V) - 14357 T Junction Temperature (C) F j Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 1.9, 11-Jul-17 Document Number: 85539 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I Reverse Current (nA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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