BAS40-00-V to BAS40-06-V Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive BAS40-00-V BAS40-04-V voltage, such as electrostatic discharges 3 3 AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in Top View accordance to WEEE 2002/96/EC 12 12 BAS40-05-V BAS40-06-V 3 3 Top View Mechanical Data Case: SOT-23 12 12 Weight: approx. 8.8 mg 18435 Packaging Codes/Options: GS18 / 10 k per 13 reel (8 mm tape), 10 k/box GS08 / 3 k per 7 reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type Marking Remarks BAS40-00-V BAS40-00-V-GS18 or BAS40-00-V-GS08 43 Tape and Reel BAS40-04-V BAS40-04-V-GS18 or BAS40-04-V-GS08 44 Tape and Reel BAS40-05-V BAS40-05-V-GS18 or BAS40-05-V-GS08 45 Tape and Reel BAS40-06-V BAS40-06-V-GS18 or BAS40-06-V-GS08 46 Tape and Reel Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V = V = V Repetitive peak reverse voltage 40 V RRM RWM R 1) I Forward continuous current mA F 200 1) t < 1 s I Surge forward current mA p FSM 600 1) 1) P mW Power dissipation tot 200 1) Device on fiberglass substrate, see layout on next page. Document Number 85701 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Rev. 1.8, 05-Aug-10 1BAS40-00-V to BAS40-06-V Vishay Semiconductors Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit 1) R Thermal resistance junction to ambient air K/W thJA 500 T Junction temperature 125 C j T Storage temperature range - 65 to + 150 C stg 1) Device on fiberglass substrate, see layout on next page. Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit I = 10 A (pulsed) V 40 V Reverse breakdown voltage R (BR) Pulse test V = 30 V, t < 300 s I Leakage current 20 100 nA R p R Pulse test t < 300 s, p V 380 mV F I = 1 mA F Forward voltage Pulse test t < 300 s, p V 1000 mV F I = 40 mA F Diode capacitance V = 0 V, f = 1 MHz C 45 pF R D I = I = 10 mA, i = 1 mA, F R R Reverse recovery time t 5ns rr R = 100 L Layout for R test thJA Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 For technical questions within your region, please contact one of the following: www.vishay.com Document Number 85701 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 2 Rev. 1.8, 05-Aug-10