BAT46W-V Vishay Semiconductors Small Signal Schottky Diode Features For general purpose applications This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, 17431 such as electrostatic discharges. This diode is also available in the DO-35 case with the type designation BAT46 and in the MiniMELF case with the type designation LL46. AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging Codes/Options: GS18/10 k per 13 reel (8 mm tape), 10 k/box GS08/3 k per 7 reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type Marking Remarks BAT46W-V BAT46W-V-GS18 or BAT46W-V-GS08 L6 Tape and Reel Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Repetitive peak reverse voltage 100 V RRM 1) I Forward continuous current mA F 150 1) t < 1 s, < 0.5 I Repetitive peak forward current mA p FRM 350 1) t < 10 ms I Surge forward current mA p FSM 750 1) 1) T = 65 C P mW Power dissipation amb tot 150 1) Valid provided that electrodes are kept at ambient temperature Document Number 85663 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Rev. 1.4, 05-Aug-10 1BAT46W-V Vishay Semiconductors Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit 1) R Thermal resistance junction to ambient air K/W thJA 300 T Junction temperature 125 C j T Ambient operating temperature range - 55 to + 125 C amb Storage temperature range T - 55 to + 150 C stg 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit I = 100 A (pulsed) V Reverse breakdown voltage 100 V R (BR) V = 1.5 V I 0.5 A R R V = 1.5 V, T = 60 C I 5A R j R V = 10 V I 0.8 A R R V = 10 V, T = 60 C I 7.5 A R j R 2) Leakage current V = 50 V I 2A R R V = 50 V, T = 60 C I 15 A R j R V = 75 V I 5A R R V = 75 V, T = 60 C I 20 A R j R I = 0.1 mA V 250 mV F F 2) I = 10 mA V 450 mV Forward voltage F F I = 250 mA V 1000 mV F F V = 0 V, f = 1 MHz C 10 pF R D Diode capacitance V = 1 V, f = 1 MHz C 6pF R D 2) Pulse test t < 300 s, < 2 % p Typical Characteristics T = 25 C, unless otherwise specified amb 100 1000 T = 60 C j 100 10 T = 60 C j 10 1 25 C 1 T = 25 C j 0.1 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 020 40 60 80100 18546 V - Forward Voltage (V) F 18547 V - Reverse Voltage (V) R Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics www.vishay.com Document Number 85663 For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 2 Rev. 1.4, 05-Aug-10 I - Forward Current (mA) F I- Reverse Leakage Current (A) R