BAT54-02V-V-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES This diode features very low turn-on voltage and fast switching 1 2 This device is protected by a PN junction guard ring against excessive voltage, such as 22321 electrostatic discharges Space saving SOD-523 package DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-523 Weight: approx. 1.4 mg Molding compound flammability rating: UL94 V-0 Terminals: high temperature soldering guaranteed: 260 C/4 x 10 s at terminals Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 3K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION BAT54-02V-V-G BAT54-02V-V-G-18 or BAT54-02V-V-G-08 Single .V Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM = working peak reverse voltage Forward continuous current I 200 mA F Repetitive peak forward current I 300 mA FRM Surge forward current I 600 mA FSM Power dissipation P 150 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 680 K/W thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Rev. 1.3, 01-Jun-17 Document Number: 82394 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT54-02V-V-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage 100 A pulses V 30 V (BR) Pulse test t < 300 s, p Leakage current I 2A R < 2 % at V = 25 V R I = 0.1mA, t < 300 s, < 2 % V 240 mV F p F I = 1 mA, t < 300 s, < 2 % V 320 mV F p F Forward voltage I = 10 mA, t < 300 s, < 2 % V 400 mV F p F I = 30 mA, t < 300 s, < 2 % V 500 mV F p F I = 100 mA, t < 300 s, < 2 % V 800 mV F p F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D I = 10 mA, I = 10 mA, F R Reverse recovery time t 5ns rr i = 1 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 14 12 T = 125 C j 100 10 - 40 C 10 8 6 1 4 25 C 0.1 2 0.01 0 0.6 1.2 1.4 0 0.2 0.4 0.8 1 0 4 8 12 16 20 24 28 18867 V - Forward Voltage (V) 18868 V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Forward Current Fig. 3 - Typical Capacitance vs. vs. Various Temperatures Reverse Applied Voltage V R 1000 T = 125 C j 100 100 C 75 C 10 50 C 1 25 C 0.1 0.01 02510 15 20530 18869 V - Reverse Voltage (V) R Fig. 2 - Typical Variation of Reverse Current vs. Various Temperatures Rev. 1.3, 01-Jun-17 Document Number: 82394 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F C - Typical Capacitance (pF) D