X-On Electronics has gained recognition as a prominent supplier of BAT54AWT1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAT54AWT1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAT54AWT1G ON Semiconductor

BAT54AWT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BAT54AWT1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30V 225mW Dual Common Anode
Datasheet: BAT54AWT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0252 ea
Line Total: USD 75.6 
Availability - 69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
26190
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0385
9000 : USD 0.031
27000 : USD 0.0286
51000 : USD 0.0275
102000 : USD 0.0268
150000 : USD 0.0265
252000 : USD 0.0255
501000 : USD 0.0246

69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0252
12000 : USD 0.025
18000 : USD 0.0243
30000 : USD 0.024

12
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 10
10 : USD 0.0404
100 : USD 0.0396
300 : USD 0.0389
1000 : USD 0.0383

7905
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.224
10 : USD 0.1722
100 : USD 0.0924
449 : USD 0.0392
500 : USD 0.0392

69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0252
12000 : USD 0.025
18000 : USD 0.0243
30000 : USD 0.024

26190
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.052
9000 : USD 0.0419
27000 : USD 0.0387
51000 : USD 0.0372
102000 : USD 0.0364

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAT54AWT1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT54AWT1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

BAT54AW Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed Low Forward Voltage 0.35 V (Typ) I = 10 mAdc SCHOTTKY BARRIER F S Prefix for Automotive and Other Applications Requiring Unique DETECTOR AND SWITCHING Site and Control Change Requirements AECQ101 Qualified and DIODES PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T = 125C unless otherwise noted) J SOT323 Rating Symbol Value Unit CASE 419 STYLE 4 Reverse Voltage V 30 V R Forward Power Dissipation P F CATHODE T = 25C 200 mW ANODE A 1 Derate above 25C 1.6 mW/C 3 2 Forward Current (DC) I 200 Max mA CATHODE F NonRepetitive Peak Forward Current I mA FSM t < 10 msec 600 MARKING DIAGRAM p Repetitive Peak Forward Current I mA FRM Pulse Wave = 1 sec, 300 B7M Duty Cycle = 66% Junction Temperature T 55 to 150 C J 1 Storage Temperature Range T 55 to +150 C stg B7 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54AWT1G SOT323 3,000/Tape & Reel (PbFree) SBAT54AWT1G SOT323 3,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2015 Rev. 5 BAT54AWT1/DBAT54AW ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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