BAT54AL Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed SCHOTTKY BARRIER Low Forward Voltage 0.35 V (Typ) I = 10 mAdc F DETECTOR AND SWITCHING S Prefix for Automotive and Other Applications Requiring Unique DIODES Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) MAXIMUM RATINGS (T = 125C unless otherwise noted) J CASE 318 Rating Symbol Value Unit STYLE 12 Reverse Voltage V 30 V R CATHODE ANODE Forward Power Dissipation P 1 F 3 T = 25C 225 mW A 2 Derate above 25C 1.8 mW/C CATHODE Forward Current (DC) I 200 Max mA F MARKING DIAGRAM NonRepetitive Peak Forward Current I mA FSM t < 10 msec 600 p Repetitive Peak Forward Current I mA FRM Pulse Wave = 1 sec, 300 B6M Duty Cycle = 66% 1 Junction Temperature T 55 to 150 C J Storage Temperature Range T 55 to +150 C stg B6 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54ALT1G SOT23 3,000/Tape & Reel (PbFree) SBAT54ALT1G SOT23 3,000/Tape & Reel (PbFree) BAT54ALT3G SOT23 10,000/Tape & Reel (PbFree) SBAT54ALT3G SOT23 10,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: October, 2016 Rev. 14 BAT54ALT1/DBAT54AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2