BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual FEATURES These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges AEC-Q101 qualified Base P/N-E3 - RoHS-compliant, commercial grade BAT54 BAT54A Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified 3 3 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 Top View MECHANICAL DATA 1 2 1 2 Case: SOT-23 BAT54C BAT54S Weight: approx. 8.8 mg 3 3 Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box Top View 08/3K per 7 reel (8 mm tape), 15K/box 1 2 1 2 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAT54-E3-08 or BAT54-E3-18 BAT54 Single diode L4 BAT54-HE3-08 or BAT54-HE3-18 BAT54A-E3-08 or BAT54A-E3-18 BAT54A Dual diodes common anode L42 BAT54A-HE3-08 or BAT54A-HE3-18 Tape and reel BAT54C-E3-08 or BAT54C-E3-18 BAT54C Dual diodes common cathode L43 BAT54C-HE3-08 or BAT54C-HE3-18 BAT54S-E3-08 or BAT54S-E3-18 BAT54S Dual diodes serial L44 BAT54S-HE3-08 or BAT54S-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current I 300 mA FRM (1) Surge forward current t < 1 s I 600 mA p FSM Repetitive peak forward current P 230 mW tot Note (1) Device on fiberglass substrate, see layout on next page THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Device on fiberglass substrate, Thermal resistance junction to ambient air R 430 K/W thJA see layout on next page Junction temperature T 125 C j Storage temperature range T - 65 to + 150 C stg Operating temperature range T - 55 to + 125 C op Rev. 1.9, 25-Feb-13 Document Number: 85508 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage I = 100 A (pulsed) V 30 V R (BR) Pulsed test t < 300 s, <2 % at p Leakage current I 2A R V = 25 V R I = 0.1 mA, t < 300 s, < 2 % V 240 mV F p F I = 1 mA, t < 300 s, < 2 % V 320 mV F p F Forward voltage I = 10 mA, t < 300 s, < 2 % V 400 mV F p F I = 30 mA, t < 300 s, < 2 % V 500 mV F p F I = 100 mA, t < 300 s, < 2 % V 800 mV F p F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D I = 10 mA to I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA, R = 100 R L LAYOUT FOR R TEST thJA Thickness: Fiberglas 15 mm (0.059 ) Copper leads 0.3 mm (0.012 ) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 14 1000 12 T = 125 C j 100 10 - 40 C 10 8 6 1 4 25 C 0.1 2 0.01 0 0 4 8 12 16 20 24 28 000.2.4 0.6 0.8 1 1.2 1.4 18868 V - Reverse Voltage (V) 18867 V - Forward Voltage (V) R F Fig. 2 - Diode Capacitance vs. Reverse Voltage V R Fig. 1 - Typical Forward Voltage Forward Current vs. Various Temperatures Rev. 1.9, 25-Feb-13 Document Number: 85508 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F C - Typical Capacitance (pF) D